Single FETs, MOSFETs

Results: 10
Manufacturer
Diodes IncorporatedInfineon TechnologiesonsemiRohm Semiconductor
Series
-HEXFET®PowerTrench®QFET®UniFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V80 V150 V200 V400 V500 V900 V
Current - Continuous Drain (Id) @ 25°C
750mA (Ta)2A (Tc)2.7A (Tc)4.4A (Ta), 22A (Tc)5.4A (Tc)5.5A (Ta)9A (Tc)10A (Ta)17A (Tc)120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
4.9mOhm @ 60A, 6V13.4mOhm @ 10A, 10V27.4mOhm @ 10A, 10V40mOhm @ 4.5A, 10V53mOhm @ 4.4A, 10V280mOhm @ 4.5A, 10V350mOhm @ 890mA, 4.5V2.3Ohm @ 2.7A, 10V3.4Ohm @ 1A, 10V4.9Ohm @ 1.35A, 10V
Vgs(th) (Max) @ Id
1.2V @ 250µA2V @ 250µA2.1V @ 250µA3V @ 250µA4V @ 1mA4V @ 250µA4.9V @ 100µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.4 nC @ 4.5 V6 nC @ 10 V21 nC @ 5 V22.4 nC @ 10 V23 nC @ 10 V40 nC @ 10 V41 nC @ 10 V53 nC @ 10 V63 nC @ 10 V
Vgs (Max)
±6V±16V±20V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 16 V225 pF @ 25 V400 pF @ 25 V660 pF @ 25 V1080 pF @ 25 V1287 pF @ 25 V1550 pF @ 25 V1620 pF @ 25 V3420 pF @ 40 V3905 pF @ 75 V
Power Dissipation (Max)
310mW (Ta)1.5W (Ta)2.5W (Ta)2.5W (Ta), 104W (Tc)2.5W (Ta), 55W (Tc)3.13W (Ta), 158W (Tc)18W (Tc)30W (Tc)85W (Tc)104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-HSOP8-PQFN (5x6)8-SODPAKSOT-723TO-220-3TO-252AATO-263 (D2PAK)
Package / Case
8-PowerTDFN8-SOIC (0.154", 3.90mm Width)SOT-723TO-220-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-PQFN
FDMS86263P
MOSFET P-CH 150V 4.4A/22A 8PQFN
onsemi
4,677
In Stock
1 : ¥24.14000
Cut Tape (CT)
3,000 : ¥11.74694
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
150 V
4.4A (Ta), 22A (Tc)
6V, 10V
53mOhm @ 4.4A, 10V
4V @ 250µA
63 nC @ 10 V
±25V
3905 pF @ 75 V
-
2.5W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
SOT-723_631AA
NTK3134NT5G
MOSFET N-CH 20V 750MA SOT723
onsemi
7,993
In Stock
1 : ¥2.79000
Cut Tape (CT)
8,000 : ¥0.47400
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
750mA (Ta)
1.5V, 4.5V
350mOhm @ 890mA, 4.5V
1.2V @ 250µA
-
±6V
120 pF @ 16 V
-
310mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-723
SOT-723
8 SO
DMN6040SSS-13
MOSFET N-CH 60V 5.5A 8SO
Diodes Incorporated
23,128
In Stock
847,500
Factory
1 : ¥3.69000
Cut Tape (CT)
2,500 : ¥1.24605
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
5.5A (Ta)
4.5V, 10V
40mOhm @ 4.5A, 10V
3V @ 250µA
22.4 nC @ 10 V
±20V
1287 pF @ 25 V
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
TO-252AA
FDD3N40TM
MOSFET N-CH 400V 2A DPAK
onsemi
3,336
In Stock
1 : ¥5.83000
Cut Tape (CT)
2,500 : ¥2.22259
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
400 V
2A (Tc)
10V
3.4Ohm @ 1A, 10V
5V @ 250µA
6 nC @ 10 V
±30V
225 pF @ 25 V
-
30W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
onsemi
1,295
In Stock
1 : ¥7.14000
Cut Tape (CT)
2,500 : ¥2.72240
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
9A (Tc)
5V, 10V
280mOhm @ 4.5A, 10V
2V @ 250µA
21 nC @ 5 V
±20V
1080 pF @ 25 V
-
2.5W (Ta), 55W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
NVD5C688NLT4G
MOSFET N-CHANNEL 60V 17A DPAK
onsemi
2,305
In Stock
40,000
Factory
1 : ¥12.40000
Cut Tape (CT)
2,500 : ¥5.59574
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
17A (Tc)
4.5V, 10V
27.4mOhm @ 10A, 10V
2.1V @ 250µA
3.4 nC @ 4.5 V
±16V
400 pF @ 25 V
-
18W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
IRF7854TRPBF
MOSFET N-CH 80V 10A 8SO
Infineon Technologies
16,734
In Stock
1 : ¥12.73000
Cut Tape (CT)
4,000 : ¥5.71924
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
10A (Ta)
10V
13.4mOhm @ 10A, 10V
4.9V @ 100µA
41 nC @ 10 V
±20V
1620 pF @ 25 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
TO-263
FQB5N90TM
MOSFET N-CH 900V 5.4A D2PAK
onsemi
1,201
In Stock
62,400
Factory
1 : ¥24.05000
Cut Tape (CT)
800 : ¥14.53135
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
900 V
5.4A (Tc)
10V
2.3Ohm @ 2.7A, 10V
5V @ 250µA
40 nC @ 10 V
±30V
1550 pF @ 25 V
-
3.13W (Ta), 158W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
HSOP8
RS6N120BHTB1
NCH 80V 120A, HSOP8, POWER MOSFE
Rohm Semiconductor
1,298
In Stock
1 : ¥23.23000
Cut Tape (CT)
2,500 : ¥10.46579
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
120A (Tc)
6V, 10V
4.9mOhm @ 60A, 6V
4V @ 1mA
53 nC @ 10 V
±20V
3420 pF @ 40 V
-
104W (Tc)
150°C (TJ)
-
-
Surface Mount
8-HSOP
8-PowerTDFN
TO-220-3
FQP3P50
MOSFET P-CH 500V 2.7A TO220-3
onsemi
0
In Stock
Active
Tube
Active
P-Channel
MOSFET (Metal Oxide)
500 V
2.7A (Tc)
10V
4.9Ohm @ 1.35A, 10V
5V @ 250µA
23 nC @ 10 V
±30V
660 pF @ 25 V
-
85W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.