Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesTexas Instruments
Series
NexFET™OptiMOS™ 5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
12 V60 V
Current - Continuous Drain (Id) @ 25°C
19A (Ta), 112A (Tc)22A (Ta)100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
3.2mOhm @ 25A, 10V3.4mOhm @ 20A, 10V9.3mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA2.2V @ 250µA2.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs
6.6 nC @ 4.5 V53 nC @ 10 V58 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
997 pF @ 6 V3500 pF @ 30 V5070 pF @ 30 V
Power Dissipation (Max)
2.5W (Ta), 83W (Tc)2.7W (Ta)3.2W (Ta), 156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
6-WSON (2x2)8-VSONP (5x6)PG-TSDSON-8-26
Package / Case
6-WDFN Exposed Pad8-PowerTDFN
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
CSD18532Q5B
MOSFET N-CH 60V 100A 8VSON
Texas Instruments
6,651
In Stock
1 : ¥18.14000
Cut Tape (CT)
2,500 : ¥8.19089
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Ta)
4.5V, 10V
3.2mOhm @ 25A, 10V
2.2V @ 250µA
58 nC @ 10 V
±20V
5070 pF @ 30 V
-
3.2W (Ta), 156W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
6-WSON
CSD13202Q2
MOSFET N-CH 12V 22A 6WSON
Texas Instruments
10,468
In Stock
1 : ¥4.60000
Cut Tape (CT)
3,000 : ¥1.55327
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
12 V
22A (Ta)
2.5V, 4.5V
9.3mOhm @ 5A, 4.5V
1.1V @ 250µA
6.6 nC @ 4.5 V
±8V
997 pF @ 6 V
-
2.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-WSON (2x2)
6-WDFN Exposed Pad
BSXXXXXXMA1
ISZ034N06LM5ATMA1
MOSFET N-CH 60V 19A/112A TSDSON
Infineon Technologies
5,984
In Stock
1 : ¥15.35000
Cut Tape (CT)
5,000 : ¥6.66217
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
19A (Ta), 112A (Tc)
4.5V, 10V
3.4mOhm @ 20A, 10V
2.3V @ 36µA
53 nC @ 10 V
±20V
3500 pF @ 30 V
-
2.5W (Ta), 83W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSDSON-8-26
8-PowerTDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.