Single FETs, MOSFETs

Results: 3
Manufacturer
Nexperia USA Inc.Vishay SiliconixWolfspeed, Inc.
Series
C3M™TrenchFET® Gen IVTrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
40 V100 V1200 V
Current - Continuous Drain (Id) @ 25°C
7.2A (Ta), 23.5A (Tc)7.2A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V15V
Rds On (Max) @ Id, Vgs
4.4mOhm @ 25A, 10V29.5mOhm @ 10A, 10V455mOhm @ 3.6A, 15V
Vgs(th) (Max) @ Id
2.4V @ 250µA3.6V @ 1mA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 15 V26.5 nC @ 10 V39 nC @ 10 V
Vgs (Max)
+15V, -4V±20V
Input Capacitance (Ciss) (Max) @ Vds
345 pF @ 1000 V1110 pF @ 50 V2781 pF @ 25 V
Power Dissipation (Max)
3.6W (Ta), 39W (Tc)40.8W (Tc)147W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
LFPAK56, Power-SO8PowerPAK® SO-8TO-263-7
Package / Case
PowerPAK® SO-8SC-100, SOT-669TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPAK-SO-8-Single_Top
SI7454FDP-T1-RE3
N-CHANNEL 100-V (D-S) MOSFET POW
Vishay Siliconix
7,959
In Stock
1 : ¥6.98000
Cut Tape (CT)
3,000 : ¥2.87488
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
7.2A (Ta), 23.5A (Tc)
4.5V, 10V
29.5mOhm @ 10A, 10V
2.4V @ 250µA
26.5 nC @ 10 V
±20V
1110 pF @ 50 V
-
3.6W (Ta), 39W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
C3M0065090J
C3M0350120J
SICFET N-CH 1200V 7.2A TO263-7
Wolfspeed, Inc.
528
In Stock
1 : ¥60.75000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
7.2A (Tc)
15V
455mOhm @ 3.6A, 15V
3.6V @ 1mA
13 nC @ 15 V
+15V, -4V
345 pF @ 1000 V
-
40.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
LFPAK56/POWER-SO8/SOT669
BUK7Y4R4-40EX
MOSFET N-CH 40V 100A LFPAK56
Nexperia USA Inc.
7,074
In Stock
1 : ¥9.61000
Cut Tape (CT)
1,500 : ¥4.20539
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
100A (Tc)
10V
4.4mOhm @ 25A, 10V
4V @ 1mA
39 nC @ 10 V
±20V
2781 pF @ 25 V
-
147W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.