Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
80 V100 V
Current - Continuous Drain (Id) @ 25°C
8.2A (Ta)36A (Ta)
Rds On (Max) @ Id, Vgs
7mOhm @ 25A, 5V11mOhm @ 11A, 5V
Vgs(th) (Max) @ Id
2.5V @ 2.5mA2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
4.3 nC @ 5 V9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
576 pF @ 50 V900 pF @ 50 V
Stocking Options
Environmental Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
EPC2252
EPC2252
TRANSGAN 80V.011OHM AECQ101 9BGA
EPC
35,123
In Stock
1 : ¥14.70000
Cut Tape (CT)
2,500 : ¥6.61694
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
80 V
8.2A (Ta)
-
11mOhm @ 11A, 5V
2.5V @ 2.5mA
4.3 nC @ 5 V
+6V, -4V
576 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
eGaN Series
EPC2001C
GANFET N-CH 100V 36A DIE OUTLINE
EPC
93,247
In Stock
1 : ¥40.88000
Cut Tape (CT)
2,500 : ¥19.89558
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
100 V
36A (Ta)
5V
7mOhm @ 25A, 5V
2.5V @ 5mA
9 nC @ 5 V
+6V, -4V
900 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.