Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

TW015N120C,S1F G3 1200V SIC-MOSFET TO-247 15MO Toshiba Semiconductor and Storage	57 In Stock	1 : ¥521.32000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	100A (Tc)	18V	20mOhm @ 50A, 18V	5V @ 11.7mA	158 nC @ 18 V	+25V, -10V	6000 pF @ 800 V	-	431W (Tc)	175°C	Through Hole	TO-247	TO-247-3
IMZA65R107M1HXKSA1 MOSFET 650V NCH SIC TRENCH Infineon Technologies	240 In Stock	1 : ¥56.98000 Tube	CoolSIC™ M1	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	20A (Tc)	18V	142mOhm @ 8.9A, 18V	5.7V @ 3mA	15 nC @ 18 V	+23V, -5V	496 pF @ 400 V	-	75W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
TW083N65C,S1F G3 650V SIC-MOSFET TO-247 83MOH Toshiba Semiconductor and Storage	142 In Stock	1 : ¥71.01000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	30A (Tc)	18V	113mOhm @ 15A, 18V	5V @ 600µA	28 nC @ 18 V	+25V, -10V	873 pF @ 400 V	-	111W (Tc)	175°C	Through Hole	TO-247	TO-247-3
TW030Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 3 Toshiba Semiconductor and Storage	107 In Stock	1 : ¥242.27000 Tube	-	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	60A (Tc)	18V	41mOhm @ 30A, 18V	5V @ 13mA	82 nC @ 18 V	+25V, -10V	2925 pF @ 800 V	-	249W (Tc)	175°C	Through Hole	TO-247-4L(X)	TO-247-4
TW015Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 1 Toshiba Semiconductor and Storage	38 In Stock	1 : ¥488.57000 Tube	-	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	100A (Tc)	18V	21mOhm @ 50A, 18V	5V @ 11.7mA	158 nC @ 18 V	+25V, -10V	6000 pF @ 800 V	-	431W (Tc)	175°C	Through Hole	TO-247-4L(X)	TO-247-4
TW107N65C,S1F G3 650V SIC-MOSFET TO-247 107MO Toshiba Semiconductor and Storage	80 In Stock	1 : ¥73.72000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	20A (Tc)	18V	145mOhm @ 10A, 18V	5V @ 1.2mA	21 nC @ 18 V	+25V, -10V	600 pF @ 400 V	-	76W (Tc)	175°C	Through Hole	TO-247	TO-247-3
TW045Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 4 Toshiba Semiconductor and Storage	77 In Stock	1 : ¥166.91000 Tube	-	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	40A (Tc)	18V	62mOhm @ 20A, 18V	5V @ 6.7mA	57 nC @ 18 V	+25V, -10V	1969 pF @ 800 V	-	182W (Tc)	175°C	Through Hole	TO-247-4L(X)	TO-247-4
C3M0120065J-TR SIC, MOSFET, 120M, 650V, TO-263- Wolfspeed, Inc.	0 In Stock Check Lead Time	1 : ¥77.34000 Cut Tape (CT) 800 : ¥48.75639 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	21A (Tc)	15V	157mOhm @ 6.76A, 15V	3.6V @ 1.86mA	26 nC @ 15 V	+19V, -8V	640 pF @ 400 V	-	86W (Tc)	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.