Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRFR1018ETRPBF MOSFET N-CH 60V 56A DPAK Infineon Technologies	18,457 In Stock	1 : ¥13.05000 Cut Tape (CT) 2,000 : ¥5.41248 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	56A (Tc)	10V	8.4mOhm @ 47A, 10V	4V @ 100µA	69 nC @ 10 V	±20V	2290 pF @ 50 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
C2M0045170D SICFET N-CH 1700V 72A TO247-3 Wolfspeed, Inc.	445 In Stock	1 : ¥963.09000 Tube	C2M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	72A (Tc)	20V	70mOhm @ 50A, 20V	4V @ 18mA	188 nC @ 20 V	+25V, -10V	3672 pF @ 1000 V	-	520W (Tc)	-40°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.