Single FETs, MOSFETs

Results: 2
Series
OptiMOS™OptiMOS™-5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
64A (Tc)176A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
2mOhm @ 100A, 10V6.5mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
2.3V @ 20µA4.1V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 4.5 V195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
840 pF @ 50 V1800 pF @ 30 V
Power Dissipation (Max)
46W (Tc)313W (Tc)
Supplier Device Package
PG-TDSON-8-6PG-TO263-3
Package / Case
8-PowerTDFNTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC065N06LS5ATMA1
MOSFET N-CHANNEL 60V 64A 8TDSON
Infineon Technologies
8,958
In Stock
1 : ¥12.23000
Cut Tape (CT)
5,000 : ¥4.81627
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
64A (Tc)
4.5V, 10V
6.5mOhm @ 32A, 10V
2.3V @ 20µA
13 nC @ 4.5 V
±20V
1800 pF @ 30 V
-
46W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB020N10N5LFATMA1
MOSFET N-CH 100V 176A TO263-3
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥60.01000
Cut Tape (CT)
1,000 : ¥34.05008
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
176A (Tc)
10V
2mOhm @ 100A, 10V
4.1V @ 270µA
195 nC @ 10 V
±20V
840 pF @ 50 V
-
313W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.