Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesonsemiVishay Siliconix
Series
-HEXFET®PowerTrench®TrenchFET®UniFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
Drain to Source Voltage (Vdss)
80 V100 V150 V250 V
Current - Continuous Drain (Id) @ 25°C
170mA (Ta)1.2A (Ta)8.9A (Ta)30A (Tc)33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
16mOhm @ 8.9A, 10V28mOhm @ 23A, 10V94mOhm @ 16.5A, 10V375mOhm @ 1.5A, 10V6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA2.5V @ 250µA4V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V33 nC @ 4.5 V41 nC @ 10 V48 nC @ 10 V
Vgs (Max)
±16V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V1890 pF @ 25 V1990 pF @ 25 V2135 pF @ 25 V
Power Dissipation (Max)
300mW (Ta)1.14W (Ta)2.5W (Ta)120W (Tc)235W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
6-TSOP8-SOICSOT-23-3TO-252AA (DPAK)TO-263 (D2PAK)
Package / Case
8-SOIC (0.154", 3.90mm Width)SOT-23-6 Thin, TSOT-23-6TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS123-7-F
MOSFET N-CH 100V 170MA SOT23-3
Diodes Incorporated
150,992
In Stock
11,241,000
Factory
1 : ¥2.13000
Cut Tape (CT)
3,000 : ¥0.35562
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
10V
6Ohm @ 170mA, 10V
2V @ 1mA
-
±20V
60 pF @ 25 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Pkg 5540
SI3440DV-T1-E3
MOSFET N-CH 150V 1.2A 6TSOP
Vishay Siliconix
11,259
In Stock
1 : ¥12.07000
Cut Tape (CT)
3,000 : ¥4.98012
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
150 V
1.2A (Ta)
6V, 10V
375mOhm @ 1.5A, 10V
4V @ 250µA
8 nC @ 10 V
±20V
-
-
1.14W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
TO252-3
IRLR2908TRPBF
MOSFET N-CH 80V 30A DPAK
Infineon Technologies
7,468
In Stock
1 : ¥16.09000
Cut Tape (CT)
2,000 : ¥4.64794
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
30A (Tc)
4.5V, 10V
28mOhm @ 23A, 10V
2.5V @ 250µA
33 nC @ 4.5 V
±16V
1890 pF @ 25 V
-
120W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
8-SOIC
FDS3572
MOSFET N-CH 80V 8.9A 8SOIC
onsemi
4,114
In Stock
7,500
Factory
1 : ¥13.14000
Cut Tape (CT)
2,500 : ¥5.91556
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
8.9A (Ta)
6V, 10V
16mOhm @ 8.9A, 10V
4V @ 250µA
41 nC @ 10 V
±20V
1990 pF @ 25 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
TO-263
FDB33N25TM
MOSFET N-CH 250V 33A D2PAK
onsemi
0
In Stock
Check Lead Time
1 : ¥25.04000
Cut Tape (CT)
800 : ¥10.18868
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
33A (Tc)
10V
94mOhm @ 16.5A, 10V
5V @ 250µA
48 nC @ 10 V
±30V
2135 pF @ 25 V
-
235W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.