Single FETs, MOSFETs

Results: 3
Manufacturer
Nexperia USA Inc.Vishay Siliconix
Series
TrenchFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V80 V
Current - Continuous Drain (Id) @ 25°C
230mA (Ta)50A (Tc)60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
1.95mOhm @ 25A, 10V25mOhm @ 12.5A, 10V4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA1.4V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.72 nC @ 4.5 V137 nC @ 10 V585 nC @ 10 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
46 pF @ 15 V5350 pF @ 25 V20000 pF @ 10 V
Power Dissipation (Max)
350mW (Ta), 1.14W (Tc)6.25W (Ta), 104W (Tc)150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PowerPAK® SO-8TO-236ABTO-263 (D2PAK)
Package / Case
PowerPAK® SO-8TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SI7137DP-T1-GE3
MOSFET P-CH 20V 60A PPAK SO-8
Vishay Siliconix
10,913
In Stock
1 : ¥18.14000
Cut Tape (CT)
3,000 : ¥8.18817
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
60A (Tc)
2.5V, 10V
1.95mOhm @ 25A, 10V
1.4V @ 250µA
585 nC @ 10 V
±12V
20000 pF @ 10 V
-
6.25W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO-263 (D2Pak)
SQM50P08-25L_GE3
MOSFET P-CHANNEL 80V 50A TO263
Vishay Siliconix
8,319
In Stock
1 : ¥20.61000
Cut Tape (CT)
800 : ¥11.52225
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
80 V
50A (Tc)
4.5V, 10V
25mOhm @ 12.5A, 10V
2.5V @ 250µA
137 nC @ 10 V
±20V
5350 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-236AB
NX3008PBK,215
MOSFET P-CH 30V 230MA TO236AB
Nexperia USA Inc.
111,180
In Stock
1 : ¥2.13000
Cut Tape (CT)
3,000 : ¥0.35471
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
230mA (Ta)
2.5V, 4.5V
4.1Ohm @ 200mA, 4.5V
1.1V @ 250µA
0.72 nC @ 4.5 V
±8V
46 pF @ 15 V
-
350mW (Ta), 1.14W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.