Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesSTMicroelectronics
Series
CoolMOS™ CFD7MDmesh™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
600 V650 V
Current - Continuous Drain (Id) @ 25°C
8.5A (Tc)44A (Tc)
Rds On (Max) @ Id, Vgs
55mOhm @ 15.1A, 10V530mOhm @ 4.25A, 10V
Vgs(th) (Max) @ Id
4.5V @ 760µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V67 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
644 pF @ 100 V2721 pF @ 400 V
Power Dissipation (Max)
70W (Tc)236W (Tc)
Supplier Device Package
PG-HSOF-8-2PowerFLAT™ (5x5)
Package / Case
8-PowerSFN8-PowerVDFN
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8PowerVDFN
STL11N65M5
MOSFET N-CH 650V 8.5A POWERFLAT
STMicroelectronics
975
In Stock
1 : ¥18.31000
Cut Tape (CT)
3,000 : ¥8.23698
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
8.5A (Tc)
10V
530mOhm @ 4.25A, 10V
5V @ 250µA
17 nC @ 10 V
±25V
644 pF @ 100 V
-
70W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerFLAT™ (5x5)
8-PowerVDFN
TOLLLEADLESS
IPT60R055CFD7XTMA1
MOSFET N-CH 600V 44A 8HSOF
Infineon Technologies
1,990
In Stock
1 : ¥51.06000
Cut Tape (CT)
2,000 : ¥27.12101
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
44A (Tc)
10V
55mOhm @ 15.1A, 10V
4.5V @ 760µA
67 nC @ 10 V
±20V
2721 pF @ 400 V
-
236W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8-2
8-PowerSFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.