Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

STV270N4F3 MOSFET N-CH 40V 270A 10POWERSO STMicroelectronics	1,120 In Stock	1 : ¥45.32000 Cut Tape (CT) 600 : ¥27.36328 Tape & Reel (TR)	STripFET™ III	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	40 V	270A (Tc)	10V	1.5mOhm @ 80A, 10V	4V @ 250µA	150 nC @ 10 V	±20V	7500 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	10-PowerSO	PowerSO-10 Exposed Bottom Pad
SUM70101EL-GE3 MOSFET P-CH 100V 120A TO263 Vishay Siliconix	60 In Stock	1 : ¥33.41000 Cut Tape (CT) 800 : ¥20.18586 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	4.5V, 10V	10.1mOhm @ 30A, 10V	2.5V @ 250µA	190 nC @ 10 V	±20V	7000 pF @ 50 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIR873DP-T1-GE3 MOSFET P-CH 150V 37A PPAK SO-8 Vishay Siliconix	0 In Stock Check Lead Time	1 : ¥12.89000 Cut Tape (CT) 3,000 : ¥5.80636 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	150 V	37A (Tc)	10V	47.5mOhm @ 10A, 10V	4V @ 250µA	48 nC @ 10 V	±20V	1805 pF @ 75 V	-	104W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
STD30NF06LAG MOSFET N-CH 60V 28A DPAK STMicroelectronics	0 In Stock Check Lead Time	2,500 : ¥3.41590 Tape & Reel (TR)	STripFET™	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	35A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.