Single FETs, MOSFETs

Results: 4
Manufacturer
Nexperia USA Inc.Rohm Semiconductor
Series
-TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)360mA (Ta)2.8A (Ta)4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4V10V
Rds On (Max) @ Id, Vgs
32mOhm @ 4.5A, 4.5V74mOhm @ 2.8A, 4.5V1.6Ohm @ 300mA, 10V8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
900mV @ 250µA950mV @ 250µA1.5V @ 100µA1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 4.5 V7.7 nC @ 4.5 V22.1 nC @ 4.5 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
13 pF @ 5 V50 pF @ 10 V744 pF @ 20 V1820 pF @ 10 V
Power Dissipation (Max)
200mW (Ta)350mW (Ta), 1.14W (Tc)480mW (Ta)490mW (Ta), 4.15W (Tc)
Operating Temperature
-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
TO-236ABUMT3
Package / Case
SC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
Nexperia USA Inc.
835,202
In Stock
1 : ¥1.97000
Cut Tape (CT)
3,000 : ¥0.33410
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
360mA (Ta)
10V
1.6Ohm @ 300mA, 10V
1.5V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
350mW (Ta), 1.14W (Tc)
-55°C ~ 150°C (TA)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
TO-236AB
PMV65XP,215
MOSFET P-CH 20V 2.8A TO236AB
Nexperia USA Inc.
253,068
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥0.75317
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2.8A (Ta)
1.8V, 4.5V
74mOhm @ 2.8A, 4.5V
900mV @ 250µA
7.7 nC @ 4.5 V
±12V
744 pF @ 20 V
-
480mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
TO-236AB
PMV27UPER
MOSFET P-CH 20V 4.5A TO236AB
Nexperia USA Inc.
5,240
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.14870
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.5A (Ta)
1.8V, 4.5V
32mOhm @ 4.5A, 4.5V
950mV @ 250µA
22.1 nC @ 4.5 V
±8V
1820 pF @ 10 V
-
490mW (Ta), 4.15W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
UMT3
2SK3018T106
MOSFET N-CH 30V 100MA UMT3
Rohm Semiconductor
0
In Stock
Active
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
100mA (Ta)
2.5V, 4V
8Ohm @ 10mA, 4V
1.5V @ 100µA
-
±20V
13 pF @ 5 V
-
200mW (Ta)
150°C (TJ)
-
-
Surface Mount
UMT3
SC-70, SOT-323
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.