Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesNexperia USA Inc.Texas Instruments
Series
-NexFET™OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
40 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
270mA (Ta)13.1A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 50A, 10V59mOhm @ 5A, 10V2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.1V @ 250µA3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1 nC @ 10 V5.6 nC @ 10 V37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
23.6 pF @ 10 V454 pF @ 50 V2600 pF @ 20 V
Power Dissipation (Max)
310mW (Ta), 1.67W (Tc)2.5W (Ta), 20.2W (Tc)2.5W (Ta), 69W (Tc)
Supplier Device Package
6-WSON (2x2)PG-TDSON-8-6TO-236AB
Package / Case
6-WDFN Exposed Pad8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC022N04LSATMA1
MOSFET N-CH 40V 100A TDSON-8-6
Infineon Technologies
17,110
In Stock
1 : ¥12.31000
Cut Tape (CT)
5,000 : ¥4.83782
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
100A (Tc)
4.5V, 10V
2.2mOhm @ 50A, 10V
2V @ 250µA
37 nC @ 10 V
±20V
2600 pF @ 20 V
-
2.5W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
TO-236AB
NX7002BKR
MOSFET N-CH 60V 270MA TO236AB
Nexperia USA Inc.
114,209
In Stock
1 : ¥1.64000
Cut Tape (CT)
3,000 : ¥0.28091
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
270mA (Ta)
5V, 10V
2.8Ohm @ 200mA, 10V
2.1V @ 250µA
1 nC @ 10 V
±20V
23.6 pF @ 10 V
-
310mW (Ta), 1.67W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
6-WSON
CSD19538Q2T
MOSFET N-CH 100V 13.1A 6WSON
Texas Instruments
1,453
In Stock
1 : ¥10.34000
Cut Tape (CT)
250 : ¥6.51956
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
13.1A (Tc)
6V, 10V
59mOhm @ 5A, 10V
3.8V @ 250µA
5.6 nC @ 10 V
±20V
454 pF @ 50 V
-
2.5W (Ta), 20.2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-WSON (2x2)
6-WDFN Exposed Pad
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.