Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesTexas Instruments
Series
NexFET™OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
12 V60 V
Current - Continuous Drain (Id) @ 25°C
22A (Ta)30A (Ta), 100A (Tc)64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V6V, 10V
Rds On (Max) @ Id, Vgs
1.6mOhm @ 50A, 10V6.6mOhm @ 50A, 10V9.3mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA2.8V @ 95µA3.3V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
6.6 nC @ 4.5 V21 nC @ 10 V71 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
997 pF @ 6 V1500 pF @ 30 V5200 pF @ 30 V
Power Dissipation (Max)
2.5W (Ta), 139W (Tc)2.5W (Ta), 46W (Tc)2.7W (Ta)
Supplier Device Package
6-WSON (2x2)PG-TDSON-8 FLPG-TDSON-8-6
Package / Case
6-WDFN Exposed Pad8-PowerTDFN
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-PowerTDFN
BSC016N06NSATMA1
MOSFET N-CH 60V 30A/100A TDSON
Infineon Technologies
27,397
In Stock
1 : ¥20.77000
Cut Tape (CT)
5,000 : ¥9.02233
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
30A (Ta), 100A (Tc)
6V, 10V
1.6mOhm @ 50A, 10V
2.8V @ 95µA
71 nC @ 10 V
±20V
5200 pF @ 30 V
-
2.5W (Ta), 139W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
6-WSON
CSD13202Q2
MOSFET N-CH 12V 22A 6WSON
Texas Instruments
10,468
In Stock
1 : ¥4.60000
Cut Tape (CT)
3,000 : ¥1.55321
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
12 V
22A (Ta)
2.5V, 4.5V
9.3mOhm @ 5A, 4.5V
1.1V @ 250µA
6.6 nC @ 4.5 V
±8V
997 pF @ 6 V
-
2.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-WSON (2x2)
6-WDFN Exposed Pad
8-Power TDFN
BSC066N06NSATMA1
MOSFET N-CH 60V 64A TDSON-8-6
Infineon Technologies
11,770
In Stock
1 : ¥11.00000
Cut Tape (CT)
5,000 : ¥4.34075
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
64A (Tc)
6V, 10V
6.6mOhm @ 50A, 10V
3.3V @ 20µA
21 nC @ 10 V
±20V
1500 pF @ 30 V
-
2.5W (Ta), 46W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.