Single FETs, MOSFETs

Results: 2
Manufacturer
Goford SemiconductorInfineon Technologies
Series
HEXFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
13A (Tc)50A (Tc)
Rds On (Max) @ Id, Vgs
80mOhm @ 5A, 10V295mOhm @ 6.6A, 10V
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 4.5 V66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
860 pF @ 25 V3918 pF @ 75 V
Power Dissipation (Max)
96W (Tc)110W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
TO-252TO-252AA (DPAK)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IRFR6215TRPBF
MOSFET P-CH 150V 13A DPAK
Infineon Technologies
6,166
In Stock
1 : ¥11.49000
Cut Tape (CT)
2,000 : ¥4.76620
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
150 V
13A (Tc)
10V
295mOhm @ 6.6A, 10V
4V @ 250µA
66 nC @ 10 V
±20V
860 pF @ 25 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
25P06
G900P15K
P-150V,-50A,RD(MAX)<80M@-10V,VTH
Goford Semiconductor
1,731
In Stock
1 : ¥12.56000
Cut Tape (CT)
2,500 : ¥5.18384
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
150 V
50A (Tc)
10V
80mOhm @ 5A, 10V
4V @ 250µA
27 nC @ 4.5 V
±20V
3918 pF @ 75 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.