Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon Technologiesonsemi
Series
OptiMOS™PowerTrench®UniFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V100 V200 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta), 9.5A (Tc)5.3A (Ta), 18A (Tc)12A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V6V, 10V
Rds On (Max) @ Id, Vgs
8mOhm @ 12A, 4.5V44mOhm @ 12A, 10V200mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2.7V @ 12µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.1 nC @ 10 V18 nC @ 10 V116 nC @ 4.5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
640 pF @ 50 V960 pF @ 100 V7860 pF @ 10 V
Power Dissipation (Max)
2.1W (Ta), 42W (Tc)2.3W (Ta), 41W (Tc)29W (Tc)
Supplier Device Package
8-MLP (3.3x3.3)PG-TSDSON-8
Package / Case
8-PowerTDFN8-PowerWDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSZ440N10NS3GATMA1
MOSFET N-CH 100V 5.3A/18A TSDSON
Infineon Technologies
22,372
In Stock
1 : ¥7.55000
Cut Tape (CT)
5,000 : ¥2.98258
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
5.3A (Ta), 18A (Tc)
6V, 10V
44mOhm @ 12A, 10V
2.7V @ 12µA
9.1 nC @ 10 V
±20V
640 pF @ 50 V
-
29W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
8-MLP, Power33
FDMC510P
MOSFET P-CH 20V 12A/18A 8MLP
onsemi
67,846
In Stock
1 : ¥17.16000
Cut Tape (CT)
3,000 : ¥7.72720
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
12A (Ta), 18A (Tc)
1.5V, 4.5V
8mOhm @ 12A, 4.5V
1V @ 250µA
116 nC @ 4.5 V
±8V
7860 pF @ 10 V
-
2.3W (Ta), 41W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
FDMC2610
FDMC2610
MOSFET N-CH 200V 2.2A/9.5A 8MLP
onsemi
0
In Stock
Check Lead Time
1 : ¥26.27000
Cut Tape (CT)
3,000 : ¥8.15921
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
2.2A (Ta), 9.5A (Tc)
6V, 10V
200mOhm @ 2.2A, 10V
4V @ 250µA
18 nC @ 10 V
±20V
960 pF @ 100 V
-
2.1W (Ta), 42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.