Single FETs, MOSFETs

Results: 3

Filters

Stacked

Scrolling

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IRF9540NPBF MOSFET P-CH 100V 23A TO220AB Infineon Technologies	2,488 In Stock	1 : ¥11.41000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	23A (Tc)	10V	117mOhm @ 11A, 10V	4V @ 250µA	97 nC @ 10 V	±20V	1300 pF @ 25 V	-	140W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
SI7469DP-T1-GE3 MOSFET P-CH 80V 28A PPAK SO-8 Vishay Siliconix	22,008 In Stock	1 : ¥21.02000 Cut Tape (CT) 3,000 : ¥9.48427 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	80 V	28A (Tc)	4.5V, 10V	25mOhm @ 10.2A, 10V	3V @ 250µA	160 nC @ 10 V	±20V	4700 pF @ 40 V	-	5.2W (Ta), 83.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SPD30P06PGBTMA1 MOSFET P-CH 60V 30A TO252-3 Infineon Technologies	15,169 In Stock	1 : ¥12.89000 Cut Tape (CT) 2,500 : ¥5.33778 Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	30A (Tc)	10V	75mOhm @ 21.5A, 10V	4V @ 1.7mA	48 nC @ 10 V	±20V	1535 pF @ 25 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63

Showing

of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.