Single FETs, MOSFETs

Results: 3
Manufacturer
onsemiRohm SemiconductorVishay Siliconix
Series
-TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)19A (Ta), 40A (Tc)22A (Ta), 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 50A, 10V6.83mOhm @ 10A, 10V2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id
2.3V @ 1mA2.4V @ 250µA3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V23 nC @ 10 V
Vgs (Max)
+20V, -16V±20V
Input Capacitance (Ciss) (Max) @ Vds
15 pF @ 25 V680 pF @ 15 V1600 pF @ 25 V
Power Dissipation (Max)
200mW (Ta)3.2W (Ta), 69W (Tc)3.8W (Ta), 17W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
8-WDFN (3.3x3.3)PowerPAK® SO-8SST3
Package / Case
8-PowerWDFNPowerPAK® SO-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SST3
RK7002BMT116
MOSFET N-CH 60V 250MA SST3
Rohm Semiconductor
266,712
In Stock
1 : ¥1.64000
Cut Tape (CT)
3,000 : ¥0.27486
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
250mA (Ta)
2.5V, 10V
2.4Ohm @ 250mA, 10V
2.3V @ 1mA
-
±20V
15 pF @ 25 V
-
200mW (Ta)
150°C (TJ)
-
-
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
8-WDFN
NVTFS003N04CTAG
MOSFET N-CH 40V 22A/103A 8WDFN
onsemi
3,000
In Stock
1 : ¥13.30000
Cut Tape (CT)
1,500 : ¥6.30119
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
22A (Ta), 103A (Tc)
10V
3.5mOhm @ 50A, 10V
3.5V @ 60µA
23 nC @ 10 V
±20V
1600 pF @ 25 V
-
3.2W (Ta), 69W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
PowerPAK SO-8
SIRA18BDP-T1-GE3
MOSFET N-CH 30V 19A/40A PPAK SO8
Vishay Siliconix
15,074
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥1.30500
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
19A (Ta), 40A (Tc)
4.5V, 10V
6.83mOhm @ 10A, 10V
2.4V @ 250µA
19 nC @ 10 V
+20V, -16V
680 pF @ 15 V
-
3.8W (Ta), 17W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.