Single FETs, MOSFETs

Results: 10
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes IncorporatedInfineon TechnologiesNexperia USA Inc.onsemi
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V80 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)2.2A (Ta)3A (Ta)4A (Ta)4.3A (Ta)5.3A (Ta)7A (Ta), 23A (Tc)7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V2.5V, 10V4.5V, 10V5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
34mOhm @ 12A, 10V45mOhm @ 4.2A, 10V45mOhm @ 4.3A, 10V45mOhm @ 5A, 10V45mOhm @ 6A, 10V50mOhm @ 4A, 10V65mOhm @ 5.3A, 10V90mOhm @ 2.2A, 4.5V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.3V @ 250µA2.1V @ 250µA2.2V @ 250µA2.5V @ 250µA3V @ 250µA3.5V @ 12µA
Gate Charge (Qg) (Max) @ Vgs
6.8 nC @ 4.5 V7.8 nC @ 10 V9.1 nC @ 10 V14 nC @ 10 V19.2 nC @ 10 V21.1 nC @ 10 V23 nC @ 10 V25.1 nC @ 10 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V290 pF @ 10 V336 pF @ 25 V645 pF @ 15 V720 pF @ 15 V722 pF @ 25 V756 pF @ 40 V793 pF @ 15 V948 pF @ 25 V1326 pF @ 15 V
Power Dissipation (Max)
200mW (Ta)480mW (Ta), 1.2W (Tc)650mW (Ta)800mW (Ta)1.25W (Ta)1.3W (Ta)1.4W (Ta)2.5W (Ta)2.5W (Ta), 32W (Tc)
Supplier Device Package
8-SO8-SOPPG-TDSON-8-5SC-59-3SOT-23-3SOT-26TO-236AB
Package / Case
3-SMD, SOT-23-3 Variant8-PowerTDFN8-SOIC (0.154", 3.90mm Width)SOT-23-6TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SC-59-3
DMG3401LSN-7
MOSFET P-CH 30V 3A SC59
Diodes Incorporated
11,923
In Stock
564,000
Factory
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.67112
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3A (Ta)
2.5V, 10V
50mOhm @ 4A, 10V
1.3V @ 250µA
25.1 nC @ 10 V
±12V
1326 pF @ 15 V
-
800mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SC-59-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2N7002
MOSFET SOT23 N 60V 5OHM 150C
onsemi
80,001
In Stock
30,000
Factory
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.98624
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMN3200U-7
MOSFET N-CH 30V 2.2A SOT23-3
Diodes Incorporated
67,270
In Stock
582,000
Factory
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.99221
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
2.2A (Ta)
1.5V, 4.5V
90mOhm @ 2.2A, 4.5V
1V @ 250µA
-
±8V
290 pF @ 10 V
-
650mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
BSC340N08NS3GATMA1
MOSFET N-CH 80V 7A/23A TDSON-8-5
Infineon Technologies
90,745
In Stock
1 : ¥7.31000
Cut Tape (CT)
5,000 : ¥2.62614
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
7A (Ta), 23A (Tc)
6V, 10V
34mOhm @ 12A, 10V
3.5V @ 12µA
9.1 nC @ 10 V
±20V
756 pF @ 40 V
-
2.5W (Ta), 32W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
SOT 26
DMP3056LDM-7
MOSFET P-CH 30V 4.3A SOT-26
Diodes Incorporated
133,898
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥1.12146
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4.3A (Ta)
4.5V, 10V
45mOhm @ 5A, 10V
2.1V @ 250µA
21.1 nC @ 10 V
±20V
948 pF @ 25 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-26
SOT-23-6
SOT-23-3
AOSS21311C
MOSFET P-CH 30V 4.3A SOT23-3
Alpha & Omega Semiconductor Inc.
6,782
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.80150
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4.3A (Ta)
4.5V, 10V
45mOhm @ 4.3A, 10V
2.2V @ 250µA
23 nC @ 10 V
±20V
720 pF @ 15 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
TO-236AB
PMV35EPER
MOSFET P-CH 30V 5.3A TO236AB
Nexperia USA Inc.
3,992
In Stock
1 : ¥4.52000
Cut Tape (CT)
3,000 : ¥1.06396
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
5.3A (Ta)
4.5V, 10V
45mOhm @ 4.2A, 10V
3V @ 250µA
19.2 nC @ 10 V
±20V
793 pF @ 15 V
-
480mW (Ta), 1.2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
8-SOP
DMP3056LSS-13
MOSFET P-CH 30V 7.1A 8SOP
Diodes Incorporated
9,192
In Stock
1 : ¥4.43000
Cut Tape (CT)
2,500 : ¥1.49527
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
7.1A (Ta)
4.5V, 10V
45mOhm @ 6A, 10V
2.1V @ 250µA
6.8 nC @ 4.5 V
±20V
722 pF @ 25 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
8 SO
DMP3098LSS-13
MOSFET P-CH 30V 5.3A 8SOP
Diodes Incorporated
2,464
In Stock
20,000
Factory
1 : ¥3.86000
Cut Tape (CT)
2,500 : ¥1.30897
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
5.3A (Ta)
4.5V, 10V
65mOhm @ 5.3A, 10V
2.1V @ 250µA
7.8 nC @ 10 V
±20V
336 pF @ 25 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
SOT-23-3
AO3401
MOSFET P-CH 30V 4A SOT23-3
Alpha & Omega Semiconductor Inc.
0
In Stock
6,000 : ¥0.78359
Tape & Reel (TR)
-
Tape & Reel (TR)
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
30 V
4A (Ta)
2.5V, 10V
50mOhm @ 4A, 10V
1.3V @ 250µA
14 nC @ 10 V
±12V
645 pF @ 15 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.