Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

TW107Z65C,S1F G3 650V SIC-MOSFET TO-247-4L 10 Toshiba Semiconductor and Storage	90 In Stock	1 : ¥69.70000 Tube	-	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	20A (Tc)	18V	152mOhm @ 10A, 18V	5V @ 1.2mA	21 nC @ 18 V	+25V, -10V	600 pF @ 400 V	-	76W (Tc)	175°C	Through Hole	TO-247-4L(X)	TO-247-4
E3M0120090J-TR SIC, MOSFET, 120M, 900V, TO-263- Wolfspeed, Inc.	0 In Stock Check Lead Time	1 : ¥116.33000 Cut Tape (CT) 800 : ¥80.31539 Tape & Reel (TR)	E	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	900 V	22A (Tc)	15V	155mOhm @ 15A, 15V	3.5V @ 3mA	18 nC @ 15 V	+15V, -4V	414 pF @ 600 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.