Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesLittelfuse Inc.
Series
OptiMOS™PolarP™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V500 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)454A (Tc)
Rds On (Max) @ Id, Vgs
0.8mOhm @ 150A, 10V230mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.6V @ 250µA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
185 nC @ 10 V205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
980 pF @ 30 V11500 pF @ 25 V
Power Dissipation (Max)
278W (Tc)890W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-HSOF-8TO-264 (IXTK)
Package / Case
8-PowerSFNTO-264-3, TO-264AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
3,904
In Stock
1 : ¥51.80000
Cut Tape (CT)
2,000 : ¥27.53429
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
454A (Tc)
10V
0.8mOhm @ 150A, 10V
3.6V @ 250µA
185 nC @ 10 V
±20V
980 pF @ 30 V
-
278W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8
8-PowerSFN
TO-264
IXTK40P50P
MOSFET P-CH 500V 40A TO264
Littelfuse Inc.
1,496
In Stock
1 : ¥169.20000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
500 V
40A (Tc)
10V
230mOhm @ 20A, 10V
4V @ 1mA
205 nC @ 10 V
±20V
11500 pF @ 25 V
-
890W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-264 (IXTK)
TO-264-3, TO-264AA
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.