Single FETs, MOSFETs

Results: 2
Manufacturer
Micro Commercial Coonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V50 V
Current - Continuous Drain (Id) @ 25°C
210mA (Ta)220mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
1.65V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
3.4Ohm @ 10mA, 4.5V3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
1.3V @ 250µA1.5V @ 1mA
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
11 pF @ 10 V60 pF @ 25 V
Power Dissipation (Max)
310mW (Ta)350mW
Supplier Device Package
SOT-23SOT-723
Package / Case
SOT-723TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-723_631AA
NTK3043NT1G
MOSFET N-CH 20V 210MA SOT723
onsemi
83,186
In Stock
1 : ¥2.79000
Cut Tape (CT)
4,000 : ¥0.50380
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
210mA (Ta)
1.65V, 4.5V
3.4Ohm @ 10mA, 4.5V
1.3V @ 250µA
±10V
11 pF @ 10 V
-
310mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-723
SOT-723
SOT 23
BSS138-TP
MOSFET N-CH 50V 220MA SOT23
Micro Commercial Co
25,157
In Stock
1 : ¥1.64000
Cut Tape (CT)
3,000 : ¥0.28845
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Tj)
4.5V, 10V
3.5Ohm @ 220mA, 10V
1.5V @ 1mA
±20V
60 pF @ 25 V
-
350mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.