Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IPP180N10N3GXKSA1 MOSFET N-CH 100V 43A TO220-3 Infineon Technologies	568 In Stock	1 : ¥11.00000 Tube	OptiMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	43A (Tc)	6V, 10V	18mOhm @ 33A, 10V	3.5V @ 33µA	25 nC @ 10 V	±20V	1800 pF @ 50 V	-	71W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
AS2324 N-CHANNEL ENHANCEMENT MODE MOSFE ANBON SEMICONDUCTOR (INT'L) LIMITED	29,129 In Stock	1 : ¥2.30000 Cut Tape (CT) 3,000 : ¥0.38299 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	2A (Ta)	4.5V, 10V	280mOhm @ 2A, 10V	3V @ 250µA	5.3 nC @ 10 V	±20V	330 pF @ 50 V	-	1.2W (Ta)	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.