Single FETs, MOSFETs
Compare | Mfr Part # | Quantity Available | Price | Series | Package | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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0 In Stock Check Lead Time | 1 : ¥164.77000 Tube | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 20V | 56mOhm @ 35A, 20V | 4.3V @ 10mA | 106 nC @ 20 V | +25V, -15V | 1762 pF @ 800 V | - | 319W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 | ||
1,479 In Stock | 1 : ¥184.97000 Tube | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 90A (Tc) | 15V | 36mOhm @ 50A, 15V | 2.69V @ 12mA | 155 nC @ 15 V | ±15V | 3901 pF @ 800 V | - | 400W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 | |||
1,602 In Stock | 1 : ¥221.83000 Tube | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 66A (Tc) | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.2mA | 99 nC @ 15 V | +15V, -4V | 2900 pF @ 1000 V | - | 326W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 | |||
2,390 In Stock | 1 : ¥145.07000 Tube | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 71A (Tc) | 15V | 48mOhm @ 35A, 15V | 2.69V @ 10mA | 106 nC @ 15 V | ±15V | 2929 pF @ 800 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 | |||
818 In Stock | 1 : ¥249.91000 Tube | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 18V | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107 nC @ 18 V | +22V, -4V | 1337 pF @ 800 V | - | 262W | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 | ||
173 In Stock | 1 : ¥204.83000 Tube | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 66A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.6V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1990 pF @ 1000 V | - | 323W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 | ||
439 In Stock | 1 : ¥109.93000 Tube | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 54A (Tc) | 18V | 54mOhm @ 20A, 18V | 4.4V @ 10mA | 75 nC @ 18 V | +22V, -10V | 1700 pF @ 800 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 | ||
0 In Stock Check Lead Time | 1 : ¥173.23000 Tube | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 39A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 95 nC @ 20 V | +22V, -6V | 1825 pF @ 800 V | - | 179W (Tc) | -55°C ~ 150°C | Through Hole | TO-247AD | TO-247-3 | ||
0 In Stock Check Lead Time | 1 : ¥359.75000 Tube | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 20V | 32mOhm @ 50A, 20V | 4V @ 30mA | 265 nC @ 20 V | +22V, -6V | 495 pF @ 800 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |