Single FETs, MOSFETs

Results: 5
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDDiodes IncorporatedNexperia USA Inc.onsemiTexas Instruments
Series
-NexFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V50 V60 V
Current - Continuous Drain (Id) @ 25°C
190mA (Ta), 300mA (Tc)220mA (Ta)380mA (Ta)1.3A (Ta)60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 25A, 10V160mOhm @ 1.5A, 4.5V2Ohm @ 500mA, 10V3Ohm @ 500mA, 10V4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.6V @ 250µA1.8V @ 250µA2.1V @ 250µA2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.3 nC @ 4.5 V0.43 nC @ 4.5 V5 nC @ 4.5 V30 nC @ 4.5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
20 pF @ 10 V27 pF @ 25 V50 pF @ 25 V162 pF @ 10 V4420 pF @ 15 V
Power Dissipation (Max)
265mW (Ta), 1.33W (Tc)350mW (Ta)370mW (Ta)500mW (Ta)2.8W (Ta), 108W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-VSON-CLIP (3.3x3.3)SOT-23SOT-23-3TO-236AB
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002NXAKR
MOSFET N-CH 60V 190MA TO236AB
Nexperia USA Inc.
76,312
In Stock
1 : ¥1.23000
Cut Tape (CT)
3,000 : ¥0.20992
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
190mA (Ta), 300mA (Tc)
5V, 10V
4.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.43 nC @ 4.5 V
±20V
20 pF @ 10 V
-
265mW (Ta), 1.33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2N7002K-7
MOSFET N-CH 60V 380MA SOT23-3
Diodes Incorporated
333,196
In Stock
58,398,000
Factory
1 : ¥1.72000
Cut Tape (CT)
3,000 : ¥0.28983
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
380mA (Ta)
5V, 10V
2Ohm @ 500mA, 10V
2.5V @ 1mA
0.3 nC @ 4.5 V
±20V
50 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
NDS331N
MOSFET N-CH 20V 1.3A SUPERSOT3
onsemi
153,434
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.20594
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.3A (Ta)
2.7V, 4.5V
160mOhm @ 1.5A, 4.5V
1V @ 250µA
5 nC @ 4.5 V
±8V
162 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
CSD17575Q3
MOSFET N-CH 30V 60A 8VSON
Texas Instruments
55,159
In Stock
1 : ¥6.16000
Cut Tape (CT)
2,500 : ¥3.27354
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
60A (Ta)
4.5V, 10V
2.3mOhm @ 25A, 10V
1.8V @ 250µA
30 nC @ 4.5 V
±20V
4420 pF @ 15 V
-
2.8W (Ta), 108W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (3.3x3.3)
8-PowerTDFN
BSS138
BSS138
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
202,907
In Stock
1 : ¥1.31000
Cut Tape (CT)
3,000 : ¥0.22873
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
1.6V @ 250µA
-
±20V
27 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
Showing
of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.