Single FETs, MOSFETs

Results: 2
Manufacturer
Littelfuse Inc.STMicroelectronics
Series
-PowerMESH™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)3A (Tc)
Rds On (Max) @ Id, Vgs
7.3Ohm @ 1.5A, 10V9Ohm @ 1.3A, 10V
Gate Charge (Qg) (Max) @ Vgs
29.3 nC @ 10 V38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
939 pF @ 25 V1375 pF @ 25 V
Power Dissipation (Max)
140W (Tc)250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
H2PAKTO-263AA
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-263-3, D2PAK (2 Leads + Tab), Variant
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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of 2
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
MOSFET N-CH 1500V 2.5A H2PAK
STH3N150-2
MOSFET N-CH 1500V 2.5A H2PAK
STMicroelectronics
395
In Stock
1 : ¥51.72000
Cut Tape (CT)
1,000 : ¥20.33184
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
1500 V
2.5A (Tc)
10V
9Ohm @ 1.3A, 10V
5V @ 250µA
29.3 nC @ 10 V
±30V
939 pF @ 25 V
-
140W (Tc)
150°C (TJ)
Surface Mount
H2PAK
TO-263-3, D2PAK (2 Leads + Tab), Variant
TO-263AB
IXTA3N150HV
MOSFET N-CH 1500V 3A TO263
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥88.17000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1500 V
3A (Tc)
10V
7.3Ohm @ 1.5A, 10V
5V @ 250µA
38.6 nC @ 10 V
±30V
1375 pF @ 25 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.