Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedToshiba Semiconductor and StorageVishay Siliconix
Series
-TrenchFET® Gen IVU-MOSIX-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
590mA (Ta)15A (Ta)23.7A (Ta), 81.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
4.3mOhm @ 15A, 10V8.9mOhm @ 4A, 10V495mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250µA (Typ)2.1V @ 100µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.54 nC @ 8 V7.5 nC @ 4.5 V48 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
80 pF @ 10 V1130 pF @ 15 V1980 pF @ 30 V
Power Dissipation (Max)
240mW (Ta)1.25W (Ta)4.8W (Ta), 57W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TA)
Supplier Device Package
6-UDFNB (2x2)PowerPAK® 1212-8SSOT-523
Package / Case
6-WDFN Exposed PadPowerPAK® 1212-8SSOT-523
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-523
DMP21D0UT-7
MOSFET P-CH 20V 590MA SOT523
Diodes Incorporated
281,253
In Stock
978,000
Factory
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.66248
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
590mA (Ta)
1.8V, 4.5V
495mOhm @ 400mA, 4.5V
700mV @ 250µA (Typ)
1.54 nC @ 8 V
±8V
80 pF @ 10 V
-
240mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
43,934
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥1.18673
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
15A (Ta)
4.5V, 10V
8.9mOhm @ 4A, 10V
2.1V @ 100µA
7.5 nC @ 4.5 V
±20V
1130 pF @ 15 V
-
1.25W (Ta)
150°C (TA)
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
PowerPAK 1212-8S
SISS26LDN-T1-GE3
MOSFET N-CH 60V 23.7A/81.2A PPAK
Vishay Siliconix
6,609
In Stock
1 : ¥10.26000
Cut Tape (CT)
3,000 : ¥4.24441
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
23.7A (Ta), 81.2A (Tc)
4.5V, 10V
4.3mOhm @ 15A, 10V
2.5V @ 250µA
48 nC @ 10 V
±20V
1980 pF @ 30 V
-
4.8W (Ta), 57W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.