Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
700mA (Ta)900mA (Ta)
Rds On (Max) @ Id, Vgs
300mOhm @ 1.4A, 4.5V460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250µA1V @ 100µA
Input Capacitance (Ciss) (Max) @ Vds
73 pF @ 25 V100 pF @ 10 V
Power Dissipation (Max)
400mW400mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
DFN1006-3SOT-23-3
Package / Case
3-XFDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN3731U-7
MOSFET N-CH 30V 900MA SOT23
Diodes Incorporated
83,634
In Stock
1 : ¥1.97000
Cut Tape (CT)
3,000 : ¥0.33605
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
900mA (Ta)
1.8V, 4.5V
460mOhm @ 200mA, 4.5V
950mV @ 250µA
5.5 nC @ 4.5 V
±8V
73 pF @ 25 V
-
400mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DFN1006-3
RV2C014BCT2CL
MOSFET P-CH 20V 700MA DFN1006-3
Rohm Semiconductor
13,779
In Stock
1 : ¥3.20000
Cut Tape (CT)
8,000 : ¥0.82090
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
700mA (Ta)
1.8V, 4.5V
300mOhm @ 1.4A, 4.5V
1V @ 100µA
-
±8V
100 pF @ 10 V
-
400mW (Ta)
150°C (TJ)
Surface Mount
DFN1006-3
3-XFDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.