238A (Tc) Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
CoolSiC™ Gen 2TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
12 V650 V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V15V, 20V
Rds On (Max) @ Id, Vgs
4mOhm @ 10A, 4.5V8.5mOhm @ 146.3A, 18V
Vgs(th) (Max) @ Id
1.5V @ 250µA5.6V @ 2.97mA
Gate Charge (Qg) (Max) @ Vgs
179 nC @ 18 V180 nC @ 4.5 V
Vgs (Max)
±8V+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
6359 pF @ 400 V11680 pF @ 6 V
Power Dissipation (Max)
375W (Tc)789W (Tc)
Grade
-Automotive
Qualification
-AEC-Q101
Supplier Device Package
PG-TO263-7-12PowerPAK® SO-8
Package / Case
PowerPAK® SO-8TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
IMBG65R007M2HXTMA1
IMBG65R007M2HXTMA1
SICFET N-CH 650V 238A TO263-7
Infineon Technologies
192
In Stock
1 : ¥313.86000
Cut Tape (CT)
1,000 : ¥211.42644
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
238A (Tc)
15V, 20V
8.5mOhm @ 146.3A, 18V
5.6V @ 2.97mA
179 nC @ 18 V
+23V, -7V
6359 pF @ 400 V
-
789W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PowerPAK-SO-8L
SQJ123ELP-T1_GE3
AUTOMOTIVE P-CHANNEL 12 V (D-S)
Vishay Siliconix
5,888
In Stock
1 : ¥12.48000
Cut Tape (CT)
3,000 : ¥5.62881
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
238A (Tc)
1.8V, 4.5V
4mOhm @ 10A, 4.5V
1.5V @ 250µA
180 nC @ 4.5 V
±8V
11680 pF @ 6 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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238A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.