22A (Ta), 40A (Tc) Single FETs, MOSFETs

Results: 6
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
Drain to Source Voltage (Vdss)
25 V30 V40 V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 20A, 10V1.9mOhm @ 20A, 10V2mOhm @ 20A, 10V2.35mOhm @ 20A, 10V2.5mOhm @ 20A, 10V2.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V36 nC @ 10 V37 nC @ 10 V44 nC @ 10 V45 nC @ 10 V52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 15 V2500 pF @ 12 V2630 pF @ 20 V2800 pF @ 15 V2850 pF @ 15 V3680 pF @ 20 V
Power Dissipation (Max)
2.1W (Ta), 43W (Tc)2.1W (Ta), 50W (Tc)2.1W (Ta), 69W (Tc)-
Supplier Device Package
PG-TSDSON-8PG-TSDSON-8-FL
Stocking Options
Environmental Options
Media
Marketplace Product
6Results
Applied FiltersRemove All
Showing
of 6
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TSDSON-8
BSZ025N04LSATMA1
MOSFET N-CH 40V 22A/40A TSDSON
Infineon Technologies
7,402
In Stock
1 : ¥12.07000
Cut Tape (CT)
5,000 : ¥4.75789
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
22A (Ta), 40A (Tc)
4.5V, 10V
2.5mOhm @ 20A, 10V
2V @ 250µA
52 nC @ 10 V
±20V
3680 pF @ 20 V
-
2.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
TSDSON-8
ISZ019N03L5SATMA1
MOSFET N-CH 30V 22A/40A TSDSON
Infineon Technologies
9,948
In Stock
1 : ¥11.08000
Cut Tape (CT)
5,000 : ¥4.35367
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
22A (Ta), 40A (Tc)
4.5V, 10V
1.9mOhm @ 20A, 10V
2V @ 250µA
44 nC @ 10 V
±20V
2800 pF @ 15 V
-
-
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
8-Power TDFN
BSZ0901NSATMA1
MOSFET N-CH 30V 22A/40A 8TSDSON
Infineon Technologies
3,466
In Stock
1 : ¥11.25000
Cut Tape (CT)
5,000 : ¥4.41834
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
22A (Ta), 40A (Tc)
4.5V, 10V
2mOhm @ 20A, 10V
2.2V @ 250µA
45 nC @ 10 V
±20V
2850 pF @ 15 V
-
2.1W (Ta), 50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
TSDSON-8
BSZ018NE2LSIATMA1
MOSFET N-CH 25V 22A/40A TSDSON
Infineon Technologies
21,100
In Stock
1 : ¥16.42000
Cut Tape (CT)
5,000 : ¥6.88573
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
22A (Ta), 40A (Tc)
4.5V, 10V
1.8mOhm @ 20A, 10V
2V @ 250µA
36 nC @ 10 V
±20V
2500 pF @ 12 V
-
2.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
TSDSON-8
BSZ0502NSIATMA1
MOSFET N-CH 30V 22A/40A TSDSON
Infineon Technologies
0
In Stock
Check Lead Time
5,000 : ¥4.66195
Tape & Reel (TR)
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
30 V
22A (Ta), 40A (Tc)
4.5V, 10V
2.8mOhm @ 20A, 10V
2V @ 250µA
26 nC @ 10 V
±20V
1600 pF @ 15 V
-
2.1W (Ta), 43W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
TSDSON-8
BSZ023N04LSATMA1
MOSFET N-CH 40V 22A/40A TSDSON
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
40 V
22A (Ta), 40A (Tc)
4.5V, 10V
2.35mOhm @ 20A, 10V
2V @ 250µA
37 nC @ 10 V
±20V
2630 pF @ 20 V
-
2.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
Showing
of 6

22A (Ta), 40A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.