21A (Tj) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IRFS654B N-CHANNEL POWER MOSFET Fairchild Semiconductor	9,857 Marketplace	Unavailable Unavailable in your selected currency	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	250 V	21A (Tj)	10V	140mOhm @ 10.5A, 10V	4V @ 250µA	123 nC @ 10 V	±30V	3400 pF @ 25 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F	TO-220-3 Full Pack
IPDD60R180CM8XTMA1 IPDD60R180CM8XTMA1 Infineon Technologies	0 In Stock Check Lead Time	1 : ¥17.57000 Cut Tape (CT) 1,700 : ¥8.32778 Tape & Reel (TR)	CoolMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	21A (Tj)	10V	180mOhm @ 5.6A, 10V	4.7V @ 140µA	17 nC @ 10 V	±20V	743 pF @ 400 V	-	169W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-10-1	10-PowerSOP Module

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.