2.25A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SQA470EEJ-T1_GE3 MOSFET N-CH 30V 2.25A PPAK SC70 Vishay Siliconix	3,000 In Stock	1 : ¥5.01000 Cut Tape (CT) 3,000 : ¥1.68659 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	2.25A (Tc)	2.5V, 4.5V	56mOhm @ 2A, 4.5V	1.6V @ 250µA	5.2 nC @ 4.5 V	±12V	453 pF @ 20 V	-	13.6W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SC-70-6	PowerPAK® SC-70-6
SQA470CEJW-T1_GE3 AUTOMOTIVE N-CHANNEL 30 V (D-S) Vishay Siliconix	4,654 In Stock	1 : ¥2.30000 Cut Tape (CT) 3,000 : ¥0.93387 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	2.25A (Tc)	2.5V, 4.5V	65mOhm @ 3A, 4.5V	1.3V @ 250µA	6 nC @ 4.5 V	±12V	440 pF @ 20 V	-	13.6W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SC-70-6	PowerPAK® SC-70-6
SQA470EJ-T1_GE3 MOSFET N-CH 30V 2.25A PPAK SC70 Vishay Siliconix	2,988 In Stock	1 : ¥5.01000 Cut Tape (CT) 3,000 : ¥1.41515 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	2.25A (Tc)	2.5V, 4.5V	65mOhm @ 3A, 4.5V	1.1V @ 250µA	6 nC @ 4.5 V	±12V	440 pF @ 20 V	-	13.6W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SC-70-6 Single	PowerPAK® SC-70-6
IRFF433 N-CHANNEL POWER MOSFET Harris Corporation	250 Marketplace	Unavailable Unavailable in your selected currency	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	450 V	2.25A (Tc)	10V	2Ohm @ 1.5A, 10V	4V @ 250µA	30 nC @ 10 V	±20V	600 pF @ 25 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-205AF (TO-39)	TO-205AF Metal Can
JANTX2N6784 MOSFET N-CH 200V 2.25A TO39 Microsemi Corporation	0 In Stock	Obsolete	-	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	2.25A (Tc)	10V	1.6Ohm @ 2.25A, 10V	4V @ 250µA	8.6 nC @ 10 V	±20V	-	-	800mW (Ta), 15W (Tc)	-55°C ~ 150°C (TJ)	Military	MIL-PRF-19500/556	Through Hole	TO-39	TO-205AF Metal Can
JANTX2N6784U MOSFET N-CH 200V 2.25A 18ULCC Microsemi Corporation	0 In Stock	Obsolete	-	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	2.25A (Tc)	10V	1.6Ohm @ 2.25A, 10V	4V @ 250µA	8.6 nC @ 10 V	±20V	-	-	800mW (Ta), 15W (Tc)	-55°C ~ 150°C (TJ)	Military	MIL-PRF-19500/556	Surface Mount	18-ULCC (9.14x7.49)	18-CLCC
JANTXV2N6784 MOSFET N-CH 200V 2.25A TO205AF Microsemi Corporation	0 In Stock	Obsolete	-	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	2.25A (Tc)	10V	1.6Ohm @ 2.25A, 10V	4V @ 250µA	8.6 nC @ 10 V	±20V	-	-	800mW (Ta), 15W (Tc)	-55°C ~ 150°C (TJ)	Military	MIL-PRF-19500/556	Through Hole	TO-205AF (TO-39)	TO-205AF Metal Can
2N6784 MOSFET N-CH 200V 2.25A TO39 Microsemi Corporation	0 In Stock	Obsolete	-	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	2.25A (Tc)	10V	1.5Ohm @ 1.5A, 0V	4V @ 250µA	8.6 nC @ 10 V	±20V	-	-	800mW (Ta), 15W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-39	TO-205AF Metal Can

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.