175A (Tc) Single FETs, MOSFETs

Results: 7

Filters

Stacked

Scrolling

Applied FiltersRemove All

Showing

of 7

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SQJ142ELP-T1_GE3 MOSFET N-CH 40V 175A PPAK SO-8 Vishay Siliconix	2,484 In Stock	1 : ¥9.11000 Cut Tape (CT) 3,000 : ¥3.77358 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	175A (Tc)	4.5V, 10V	2.8mOhm @ 10A, 10V	2.2V @ 250µA	55 nC @ 10 V	±20V	3015 pF @ 25 V	-	190W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
GSGH7R515 MOSFET, N-CH, SINGLE, 175.00A, 1 Good-Ark Semiconductor	990 In Stock	1 : ¥27.50000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	175A (Tc)	10V	7.5mOhm @ 100A, 10V	3.9V @ 250µA	81 nC @ 10 V	±20V	5400 pF @ 25 V	-	376W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
GSFT7R515 MOSFET, N-CH, SINGLE, 175.00A, 1 Good-Ark Semiconductor	1,590 In Stock	1 : ¥27.67000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	175A (Tc)	10V	7.5mOhm @ 100A, 10V	3.9V @ 250µA	81 nC @ 10 V	±20V	5400 pF @ 25 V	-	376W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
GSGA6R015 MOSFET, N-CH, SINGLE, 175A, 150V Good-Ark Semiconductor	854 In Stock	1 : ¥41.54000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	175A (Tc)	10V	-	3.9V @ 250µA	81 nC @ 10 V	±20V	5400 pF @ 25 V	-	500W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247	TO-247-3
APT20M11JVR MOSFET N-CH 200V 175A ISOTOP Microchip Technology	10 In Stock	1 : ¥593.82000 Tube	POWER MOS V®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	175A (Tc)	10V	11mOhm @ 500mA, 10V	4V @ 5mA	180 nC @ 10 V	±30V	21600 pF @ 25 V	-	700W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT20M11JVFR MOSFET N-CH 200V 175A ISOTOP Microchip Technology	0 In Stock Check Lead Time	10 : ¥673.45000 Tube	POWER MOS V®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	175A (Tc)	10V	11mOhm @ 500mA, 10V	4V @ 5mA	180 nC @ 10 V	±30V	21600 pF @ 25 V	-	700W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
IXUV170N075S MOSFET N-CH 75V 175A PLUS-220SMD IXYS	0 In Stock	Active	-	Box	Active	N-Channel	MOSFET (Metal Oxide)	75 V	175A (Tc)	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	PLUS-220SMD	PLUS-220SMD

Showing

of 7

175A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.