16.4A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IPD900P06NMATMA1 MOSFET P-CH 60V 16.4A TO252 Infineon Technologies	8,466 In Stock	1 : ¥7.55000 Cut Tape (CT) 2,500 : ¥3.13408 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	16.4A (Tc)	10V	90mOhm @ 16.4A, 10V	4V @ 710µA	27 nC @ 10 V	±20V	1100 pF @ 30 V	-	63W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPL60R199CPAUMA1 MOSFET N-CH 600V 16.4A 4VSON Infineon Technologies	2,424 In Stock	1 : ¥32.76000 Cut Tape (CT) 3,000 : ¥15.94749 Tape & Reel (TR)	CoolMOS™ CP	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	16.4A (Tc)	10V	199mOhm @ 9.9A, 10V	3.5V @ 660µA	32 nC @ 10 V	±20V	1520 pF @ 100 V	-	139W (Tc)	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
FQP16N15 MOSFET N-CH 150V 16.4A TO220-3 Fairchild Semiconductor	4,866 Marketplace	Unavailable Unavailable in your selected currency	QFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	16.4A (Tc)	10V	160mOhm @ 8.2A, 10V	4V @ 250µA	30 nC @ 10 V	±25V	910 pF @ 25 V	-	108W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQB16N15TM MOSFET N-CH 150V 16.4A D2PAK Fairchild Semiconductor	959 Marketplace	Unavailable Unavailable in your selected currency	QFET®	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	16.4A (Tc)	10V	160mOhm @ 8.2A, 10V	4V @ 250µA	30 nC @ 10 V	±25V	910 pF @ 25 V	-	3.75W (Ta), 108W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPD06P004NSAUMA1 MOSFET P-CH 60V 16.4A TO252 Infineon Technologies	0 In Stock	2,500 : ¥3.25180 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	60 V	16.4A (Tc)	10V	90mOhm @ 16.4A, 10V	4V @ 710µA	27 nC @ 10 V	±20V	1100 pF @ 30 V	-	63W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD06P004NATMA1 MOSFET P-CH 60V 16.4A TO252-3 Infineon Technologies	0 In Stock	Discontinued at Digi-Key	OptiMOS™	Tape & Reel (TR)	Discontinued at Digi-Key	P-Channel	MOSFET (Metal Oxide)	60 V	16.4A (Tc)	10V	90mOhm @ 16.4A, 10V	4V @ 710µA	27 nC @ 10 V	±20V	1100 pF @ 30 V	-	63W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.