158A (Tc) Single FETs, MOSFETs

Results: 2
Manufacturer
IXYSonsemi
Series
HiPerFET™PowerTrench®
Product Status
ActiveObsolete
Drain to Source Voltage (Vdss)
150 V200 V
Rds On (Max) @ Id, Vgs
5.9mOhm @ 120A, 10V12mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 10 V380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
9445 pF @ 75 V14400 pF @ 25 V
Power Dissipation (Max)
429W (Tc)500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Chassis MountThrough Hole
Supplier Device Package
SOT-227BTO-247-3
Package / Case
SOT-227-4, miniBLOCTO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-3 AD EP
FDH055N15A
MOSFET N-CH 150V 158A TO247-3
onsemi
7,341
In Stock
1 : ¥59.44000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
158A (Tc)
10V
5.9mOhm @ 120A, 10V
4V @ 250µA
92 nC @ 10 V
±20V
9445 pF @ 75 V
-
429W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IXYK1x0xNxxxx
IXFE180N20
MOSFET N-CH 200V 158A SOT227B
IXYS
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
200 V
158A (Tc)
10V
12mOhm @ 500mA, 10V
4V @ 8mA
380 nC @ 10 V
±20V
14400 pF @ 25 V
-
500W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
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of 2

158A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.