14.7A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SQJA70EP-T1_GE3 MOSFET N-CH 100V 14.7A PPAK SO-8 Vishay Siliconix	5,830 In Stock	1 : ¥6.57000 Cut Tape (CT) 3,000 : ¥2.48727 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	14.7A (Tc)	10V	95mOhm @ 4A, 10V	3.5V @ 250µA	7 nC @ 10 V	±20V	220 pF @ 25 V	-	27W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IPD60R400CEAUMA1 MOSFET N-CH 600V 14.7A TO252 Infineon Technologies	16,661 In Stock	1 : ¥10.34000 Cut Tape (CT) 2,500 : ¥4.28742 Tape & Reel (TR)	CoolMOS™ CE	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	14.7A (Tc)	10V	400mOhm @ 3.8A, 10V	3.5V @ 300µA	32 nC @ 10 V	±20V	700 pF @ 100 V	-	112W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-2	TO-252-3, DPAK (2 Leads + Tab), SC-63
SQJA70EP-T1_BE3 N-CHANNEL 100-V (D-S) 175C MOSFE Vishay Siliconix	5,987 In Stock	1 : ¥5.91000 Cut Tape (CT) 3,000 : ¥2.26158 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	14.7A (Tc)	10V	95mOhm @ 4A, 10V	3.5V @ 250µA	7 nC @ 10 V	±20V	220 pF @ 25 V	-	27W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8

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14.7A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.