14.1A (Tc) Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
CoolMOS™ CEThunderFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveDiscontinued at Digi-KeyObsolete
Drain to Source Voltage (Vdss)
200 V500 V
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V13V
Rds On (Max) @ Id, Vgs
105mOhm @ 7A, 10V380mOhm @ 3.2A, 13V
Vgs(th) (Max) @ Id
3.5V @ 260µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 7.5 V24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
584 pF @ 100 V608 pF @ 100 V
Power Dissipation (Max)
57W (Tc)73W (Tc)98W (Tc)
Supplier Device Package
PG-TO252-3PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IPD50R380CEAUMA1
MOSFET N-CH 500V 14.1A TO252-3
Infineon Technologies
20,527
In Stock
1 : ¥8.87000
Cut Tape (CT)
2,500 : ¥3.67848
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
500 V
14.1A (Tc)
13V
380mOhm @ 3.2A, 13V
3.5V @ 260µA
24.8 nC @ 10 V
±20V
584 pF @ 100 V
-
98W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
PowerPAK 1212-8
SISS98DN-T1-GE3
MOSFET N-CH 200V 14.1A PPAK
Vishay Siliconix
2,320
In Stock
1 : ¥13.30000
Cut Tape (CT)
3,000 : ¥3.51437
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
14.1A (Tc)
7.5V, 10V
105mOhm @ 7A, 10V
4V @ 250µA
14 nC @ 7.5 V
±20V
608 pF @ 100 V
-
57W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
TO252-3
IPD50R380CEATMA1
MOSFET N-CH 500V 14.1A TO252-3
Infineon Technologies
0
In Stock
1 : ¥7.14000
Cut Tape (CT)
2,500 : ¥2.94279
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
500 V
14.1A (Tc)
13V
380mOhm @ 3.2A, 13V
3.5V @ 260µA
24.8 nC @ 10 V
±20V
584 pF @ 100 V
-
98W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IPD50R380CEBTMA1
MOSFET N-CH 500V 14.1A TO252-3
Infineon Technologies
0
In Stock
Discontinued at Digi-Key
Tape & Reel (TR)
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
500 V
14.1A (Tc)
13V
380mOhm @ 3.2A, 13V
3.5V @ 260µA
24.8 nC @ 10 V
±20V
584 pF @ 100 V
-
73W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
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14.1A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.