13A Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
9mOhm @ 9A, 4.5V12mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
1.1V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23.6 nC @ 10 V48 nC @ 8 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
1015 pF @ 15 V1791 pF @ 10 V
Power Dissipation (Max)
2.2W2.9W
Supplier Device Package
DFN2020-6JDFN2020-6LE
Package / Case
6-VDFN Exposed Pad6-WDFN Exposed Pad
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
MCM13N03-TP
MCM13N03-TP
N-CHANNEL MOSFET,DFN2020-6LE
Micro Commercial Co
3,130
In Stock
1 : ¥5.09000
Cut Tape (CT)
3,000 : ¥1.94964
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
13A
4.5V, 10V
12mOhm @ 8A, 10V
2.5V @ 250µA
23.6 nC @ 10 V
±20V
1015 pF @ 15 V
-
2.9W
-55°C ~ 150°C (TJ)
Surface Mount
DFN2020-6LE
6-VDFN Exposed Pad
MCM1206-TP
MCMN2014A-TP
N-CHANNEL MOSFET,DFN2020-6J
Micro Commercial Co
4,808
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.93285
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
13A
1.8V, 4.5V
9mOhm @ 9A, 4.5V
1.1V @ 250µA
48 nC @ 8 V
±10V
1791 pF @ 10 V
-
2.2W
-55°C ~ 150°C (TJ)
Surface Mount
DFN2020-6J
6-WDFN Exposed Pad
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of 2

13A Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.