13.6A (Ta), 49A (Tc) Single FETs, MOSFETs

Results: 6
Manufacturer
Diodes IncorporatedonsemiVishay Siliconix
Series
-PowerTrench®TrenchFET®
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V40 V60 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
6.7mOhm @ 13.6A, 10V8mOhm @ 13A, 10V8.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
1.4V @ 250µA2.3V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.3 nC @ 10 V131 nC @ 10 V162 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
881 pF @ 20 V4250 pF @ 15 V6940 pF @ 30 V
Power Dissipation (Max)
2.5W (Ta), 104W (Tc)2.7W (Ta), 5W (Tc)2.9W (Ta), 37.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountSurface Mount, Wettable Flank
Supplier Device Package
8-PQFN (5x6)8-SOICPowerDI3333-8 (SWP) Type UX
Package / Case
8-PowerTDFN8-PowerVDFN8-SOIC (0.154", 3.90mm Width)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
SI4463CDY-T1-GE3
MOSFET P-CH 20V 13.6A/49A 8SO
Vishay Siliconix
9,520
In Stock
1 : ¥7.39000
Cut Tape (CT)
2,500 : ¥3.05598
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
13.6A (Ta), 49A (Tc)
2.5V, 10V
8mOhm @ 13A, 10V
1.4V @ 250µA
162 nC @ 10 V
±12V
4250 pF @ 15 V
-
2.7W (Ta), 5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
8-PQFN
FDMS5352
MOSFET N-CH 60V 13.6A/49A 8PQFN
onsemi
4,221
In Stock
1 : ¥22.99000
Cut Tape (CT)
3,000 : ¥11.17256
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
13.6A (Ta), 49A (Tc)
4.5V, 10V
6.7mOhm @ 13.6A, 10V
3V @ 250µA
131 nC @ 10 V
±20V
6940 pF @ 30 V
-
2.5W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
8-PowerVDFN_BOTTOM
DMTH47M2LFVWQ-13
MOSFET BVDSS: 31V~40V PowerDI333
Diodes Incorporated
1,465
In Stock
1 : ¥5.42000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
40 V
13.6A (Ta), 49A (Tc)
4.5V, 10V
8.9mOhm @ 20A, 10V
2.3V @ 250µA
12.3 nC @ 10 V
±20V
881 pF @ 20 V
-
2.9W (Ta), 37.5W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
8-PowerVDFN_BOTTOM
DMTH47M2LFVW-7
MOSFET BVDSS: 31V~40V PowerDI333
Diodes Incorporated
0
In Stock
Check Lead Time
2,000 : ¥1.84470
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
40 V
13.6A (Ta), 49A (Tc)
4.5V, 10V
8.9mOhm @ 20A, 10V
2.3V @ 250µA
12.3 nC @ 10 V
±20V
881 pF @ 20 V
-
2.9W (Ta), 37.5W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
8-PowerVDFN_BOTTOM
DMTH47M2LFVW-13
MOSFET BVDSS: 31V~40V PowerDI333
Diodes Incorporated
0
In Stock
Check Lead Time
3,000 : ¥1.84472
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
40 V
13.6A (Ta), 49A (Tc)
4.5V, 10V
8.9mOhm @ 20A, 10V
2.3V @ 250µA
12.3 nC @ 10 V
±20V
881 pF @ 20 V
-
2.9W (Ta), 37.5W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
8-PowerVDFN_BOTTOM
DMTH47M2LFVWQ-7
MOSFET BVDSS: 31V~40V PowerDI333
Diodes Incorporated
0
In Stock
Check Lead Time
2,000 : ¥2.06370
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
40 V
13.6A (Ta), 49A (Tc)
4.5V, 10V
8.9mOhm @ 20A, 10V
2.3V @ 250µA
12.3 nC @ 10 V
±20V
881 pF @ 20 V
-
2.9W (Ta), 37.5W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
Showing
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13.6A (Ta), 49A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.