13.5A (Ta), 22A (Tc) Single FETs, MOSFETs

Results: 4
Manufacturer
Fairchild Semiconductoronsemi
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Rds On (Max) @ Id, Vgs
7.9mOhm @ 13.5A, 10V8.2mOhm @ 13.5A, 10V10mOhm @ 13.5A, 10V
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V63 nC @ 10 V64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1605 pF @ 15 V4550 pF @ 30 V4615 pF @ 30 V
Power Dissipation (Max)
2.3W (Ta), 40W (Tc)2.5W (Ta), 29W (Tc)2.5W (Ta), 69W (Tc)
Supplier Device Package
8-MLP (3.3x3.3)8-PQFN (5x6)
Package / Case
8-PowerTDFN8-PowerWDFN
Stocking Options
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Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-MLP, Power33
FDMC86520L
MOSFET N-CH 60V 13.5A/22A 8MLP
onsemi
8,908
In Stock
1 : ¥18.88000
Cut Tape (CT)
3,000 : ¥8.52263
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
13.5A (Ta), 22A (Tc)
4.5V, 10V
7.9mOhm @ 13.5A, 10V
3V @ 250µA
64 nC @ 10 V
±20V
4550 pF @ 30 V
-
2.3W (Ta), 40W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
8-PQFN
FDMS7698
MOSFET N-CH 30V 13.5A/22A 8PQFN
onsemi
1,519
In Stock
3,000
Factory
1 : ¥6.08000
Cut Tape (CT)
3,000 : ¥2.30646
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
13.5A (Ta), 22A (Tc)
4.5V, 10V
10mOhm @ 13.5A, 10V
3V @ 250µA
24 nC @ 10 V
±20V
1605 pF @ 15 V
-
2.5W (Ta), 29W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
8-PQFN
FDMS86520L
MOSFET N CH 60V 13.5A 8PQFN
onsemi
4,740
In Stock
1 : ¥16.42000
Cut Tape (CT)
3,000 : ¥7.41096
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
13.5A (Ta), 22A (Tc)
4.5V, 10V
8.2mOhm @ 13.5A, 10V
3V @ 250µA
63 nC @ 10 V
±20V
4615 pF @ 30 V
-
2.5W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
ATMATMATA663211-GBQW
FDMS7698
POWER FIELD-EFFECT TRANSISTOR, 1
Fairchild Semiconductor
17,101
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
13.5A (Ta), 22A (Tc)
4.5V, 10V
10mOhm @ 13.5A, 10V
3V @ 250µA
24 nC @ 10 V
±20V
1605 pF @ 15 V
-
2.5W (Ta), 29W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
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13.5A (Ta), 22A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.