115A (Tc) Single FETs, MOSFETs

Results: 14
Manufacturer
Diodes IncorporatedInfineon TechnologiesIXYSLittelfuse Inc.Micro Commercial CoNexperia USA Inc.Vishay SiliconixWolfspeed, Inc.
Series
-C3M™CoolSiC™ Gen 2HEXFET®HiPerFET™, PolarTrenchFET®TrenchMV™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
20 V40 V60 V75 V100 V200 V650 V1200 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V6V, 10V7V, 10V10V10V, 15V15V15V, 20V
Rds On (Max) @ Id, Vgs
3mOhm @ 15A, 10V3.2mOhm @ 57.5A, 10V5mOhm @ 25A, 10V5.2mOhm @ 9.8A, 10V5.4mOhm @ 20A, 10V5.5mOhm @ 25A, 10V9mOhm @ 54A, 10V18mOhm @ 64.2A, 18V18mOhm @ 70A, 10V22.3mOhm @ 75A, 15V
Vgs(th) (Max) @ Id
900mV @ 250µA1.1V @ 250µA3V @ 250µA3.6V @ 23mA4V @ 1mA4V @ 250µA5V @ 4mA5.6V @ 13mA
Gate Charge (Qg) (Max) @ Vgs
79 nC @ 18 V83 nC @ 10 V95 nC @ 10 V135 nC @ 10 V162 nC @ 10 V165 nC @ 10 V170 nC @ 10 V207 nC @ 15 V211 nC @ 15 V221 nC @ 10 V240 nC @ 10 V
Vgs (Max)
±10V±12V+15V, -4V±20V+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
2792 pF @ 400 V3840 pF @ 10 V4080 pF @ 25 V5600 pF @ 25 V5830 pF @ 10 V6085 pF @ 1000 V6238 pF @ 50 V6855 pF @ 20 V7500 pF @ 25 V7700 pF @ 25 V
Power Dissipation (Max)
1W (Ta)1W (Ta), 52W (Tc)3.4W (Ta), 104W (Tc)83.3W (Tj)136W (Tc)150W (Tc)238W (Tc)270W (Tc)416W (Tc)556W (Tc)680W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 175°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Chassis MountSurface MountSurface Mount, Wettable FlankThrough Hole
Supplier Device Package
DFN5060ISOPLUS220™LFPAK56, Power-SO8PG-TO263-7-12POWERDI3333-8PowerDI5060-8 (Type UX)SOT-227BTO-220ABTO-247-3TO-247-4LTO-252AA
Package / Case
8-PowerTDFN8-PowerVDFNISOPLUS220™SC-100, SOT-669SOT-227-4, miniBLOCTO-220-3TO-247-3TO-247-4TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
C2D10120D
C3M0016120D
SICFET N-CH 1200V 115A TO247-3
Wolfspeed, Inc.
1,407
In Stock
1 : ¥597.59000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
115A (Tc)
15V
22.3mOhm @ 75A, 15V
3.6V @ 23mA
207 nC @ 15 V
+15V, -4V
6085 pF @ 1000 V
-
556W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065100K
C3M0016120K
SICFET N-CH 1.2KV 115A TO247-4
Wolfspeed, Inc.
258
In Stock
1 : ¥748.41000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
115A (Tc)
15V
22.3mOhm @ 75A, 15V
3.6V @ 23mA
211 nC @ 15 V
+15V, -4V
6085 pF @ 1000 V
-
556W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
PowerDI5060 UX
DMP4006SPSWQ-13
MOSFET BVDSS: 41V~60V POWERDI506
Diodes Incorporated
2,816
In Stock
1 : ¥15.35000
Cut Tape (CT)
2,500 : ¥6.92119
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
115A (Tc)
6V, 10V
5.2mOhm @ 9.8A, 10V
3V @ 250µA
162 nC @ 10 V
±20V
6855 pF @ 20 V
-
3.4W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
IXYK1x0xNxxxx
IXFN140N20P
MOSFET N-CH 200V 115A SOT227B
Littelfuse Inc.
586
In Stock
1 : ¥230.86000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
115A (Tc)
10V, 15V
18mOhm @ 70A, 10V
5V @ 4mA
240 nC @ 10 V
±20V
7500 pF @ 25 V
-
680W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
LFPAK56/POWER-SO8/SOT669
PSMN5R5-100YSFX
PSMN5R5-100YSF/SOT669/LFPAK
Nexperia USA Inc.
1,225
In Stock
1 : ¥21.43000
Cut Tape (CT)
1,500 : ¥6.15735
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
115A (Tc)
7V, 10V
5.5mOhm @ 25A, 10V
4V @ 1mA
95 nC @ 10 V
±20V
6238 pF @ 50 V
-
238W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
0
In Stock
Check Lead Time
1 : ¥163.29000
Cut Tape (CT)
1,000 : ¥109.99808
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
115A (Tc)
15V, 20V
18mOhm @ 64.2A, 18V
5.6V @ 13mA
79 nC @ 18 V
+23V, -7V
2792 pF @ 400 V
-
416W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PowerDI3333-8
DMP2004UFG-7
MOSFET BVDSS: 8V~24V PowerDI3333
Diodes Incorporated
0
In Stock
Check Lead Time
2,000 : ¥2.74700
Bulk
-
Bulk
Active
P-Channel
MOSFET (Metal Oxide)
20 V
115A (Tc)
2.5V, 10V
3mOhm @ 15A, 10V
1.1V @ 250µA
83 nC @ 10 V
±12V
3840 pF @ 10 V
-
1W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
POWERDI3333-8
8-PowerVDFN
PowerDI3333-8
DMP2004UFG-13
MOSFET BVDSS: 8V~24V PowerDI3333
Diodes Incorporated
0
In Stock
Check Lead Time
3,000 : ¥2.74700
Bulk
-
Bulk
Active
P-Channel
MOSFET (Metal Oxide)
20 V
115A (Tc)
2.5V, 10V
3mOhm @ 15A, 10V
1.1V @ 250µA
83 nC @ 10 V
±12V
3840 pF @ 10 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
POWERDI3333-8
8-PowerVDFN
0
In Stock
Check Lead Time
5,000 : ¥4.41129
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
P-Channel
MOSFET (Metal Oxide)
20 V
115A (Tc)
4.5V, 10V
3.2mOhm @ 57.5A, 10V
900mV @ 250µA
221 nC @ 10 V
±10V
5830 pF @ 10 V
-
83.3W (Tj)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN5060
8-PowerTDFN
PowerDI5060 UX
DMP4006SPSW-13
MOSFET BVDSS: 41V~60V POWERDI506
Diodes Incorporated
0
In Stock
5,000
Factory
Check Lead Time
2,500 : ¥6.13470
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
P-Channel
MOSFET (Metal Oxide)
40 V
115A (Tc)
6V, 10V
5.2mOhm @ 9.8A, 10V
3V @ 250µA
162 nC @ 10 V
±20V
6855 pF @ 20 V
-
3.4W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
TO-252
SUD50N04-05L-E3
MOSFET N-CH 40V 115A TO252
Vishay Siliconix
0
In Stock
2,000 : ¥15.29606
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
40 V
115A (Tc)
4.5V, 10V
5.4mOhm @ 20A, 10V
3V @ 250µA
135 nC @ 10 V
±20V
5600 pF @ 25 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220AB PKG
IRFB4215
MOSFET N-CH 60V 115A TO220AB
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
115A (Tc)
10V
9mOhm @ 54A, 10V
4V @ 250µA
170 nC @ 10 V
±20V
4080 pF @ 25 V
-
270W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRFB4215PBF
MOSFET N-CH 60V 115A TO220AB
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
115A (Tc)
10V
9mOhm @ 54A, 10V
4V @ 250µA
170 nC @ 10 V
±20V
4080 pF @ 25 V
-
270W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
IXTC220N075T
IXTC220N075T
MOSFET N-CH 75V 115A ISOPLUS220
IXYS
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
75 V
115A (Tc)
10V
5mOhm @ 25A, 10V
4V @ 250µA
165 nC @ 10 V
±20V
7700 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
ISOPLUS220™
ISOPLUS220™
Showing
of 14

115A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.