109A (Tc) Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon Technologiesonsemi
Series
-CoolMOS™CoolMOS™ C7StrongIFET™2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
60 V600 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
4mOhm @ 60A, 10V5mOhm @ 50A, 10V17mOhm @ 58.2A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA3.3V @ 52µA4V @ 2.91mA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 4.5 V68 nC @ 10 V240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1935 pF @ 25 V3000 pF @ 30 V9890 pF @ 400 V
Power Dissipation (Max)
3.8W (Ta), 107W (Tc)114W (Tc)446W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-WDFN (3.3x3.3)PG-TO220-3PG-TO247-3-41PG-TO247-4
Package / Case
8-PowerWDFNTO-220-3TO-247-3TO-247-4
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
606
In Stock
1 : ¥160.26000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
109A (Tc)
10V
17mOhm @ 58.2A, 10V
4V @ 2.91mA
240 nC @ 10 V
±20V
9890 pF @ 400 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
409
In Stock
1 : ¥10.59000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
109A (Tc)
6V, 10V
4mOhm @ 60A, 10V
3.3V @ 52µA
68 nC @ 10 V
±20V
3000 pF @ 30 V
-
3.8W (Ta), 107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO220-3
TO-220-3
MOSFETTO247
IPZ60R017C7XKSA1
MOSFET N-CH 600V 109A TO247-4
Infineon Technologies
186
In Stock
1 : ¥166.58000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
109A (Tc)
10V
17mOhm @ 58.2A, 10V
4V @ 2.91mA
240 nC @ 10 V
±20V
9890 pF @ 400 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-4
TO-247-4
8-WDFN
NVTFS5C658NLTAG
MOSFET N-CH 60V 109A 8WDFN
onsemi
1,490
In Stock
1 : ¥12.31000
Cut Tape (CT)
1,500 : ¥5.85075
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
109A (Tc)
4.5V, 10V
5mOhm @ 50A, 10V
2.2V @ 250µA
12 nC @ 4.5 V
±20V
1935 pF @ 25 V
-
114W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
8-WDFN
NVTFS5C658NLWFTAG
MOSFET N-CH 60V 109A 8WDFN
onsemi
1,192
In Stock
1 : ¥13.55000
Cut Tape (CT)
1,500 : ¥6.42658
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
109A (Tc)
4.5V, 10V
5mOhm @ 50A, 10V
2.2V @ 250µA
12 nC @ 4.5 V
±20V
1935 pF @ 25 V
-
114W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
Showing
of 5

109A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.