10.9A (Tc) Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesNXP USA Inc.
Series
CoolMOS™CoolMOS™ CFD2OptiMOS™TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveLast Time BuyObsolete
Drain to Source Voltage (Vdss)
100 V250 V650 V
Rds On (Max) @ Id, Vgs
165mOhm @ 5.5A, 10V180mOhm @ 9A, 10V340mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA4V @ 32µA4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs
11.4 nC @ 10 V14.7 nC @ 10 V41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
360 pF @ 25 V920 pF @ 100 V1100 pF @ 100 V
Power Dissipation (Max)
57.7W (Tc)62.5W (Tc)104.2W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
IPAKPG-TDSON-8-5PG-TSDSON-8PG-VSON-4
Package / Case
4-PowerTSFN8-PowerTDFNTO-251-3 Short Leads, IPAK, TO-251AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC16DN25NS3GATMA1
MOSFET N-CH 250V 10.9A TDSON-8-5
Infineon Technologies
9,788
In Stock
1 : ¥14.20000
Cut Tape (CT)
5,000 : ¥6.14954
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
10.9A (Tc)
10V
165mOhm @ 5.5A, 10V
4V @ 32µA
11.4 nC @ 10 V
±20V
920 pF @ 100 V
-
62.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
8-Power TDFN
BSZ16DN25NS3GATMA1
MOSFET N-CH 250V 10.9A 8TSDSON
Infineon Technologies
5,064
In Stock
1 : ¥15.52000
Cut Tape (CT)
5,000 : ¥6.73647
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
10.9A (Tc)
10V
165mOhm @ 5.5A, 10V
4V @ 32µA
11.4 nC @ 10 V
±20V
920 pF @ 100 V
-
62.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
MOSFET N-CH 650V 10.9A 4VSON
IPL65R340CFDAUMA2
MOSFET N-CH 650V 10.9A 4VSON
Infineon Technologies
0
In Stock
3,000 : ¥10.74921
Tape & Reel (TR)
Tape & Reel (TR)
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
650 V
10.9A (Tc)
10V
340mOhm @ 4.4A, 10V
4.5V @ 400µA
41 nC @ 10 V
±20V
1100 pF @ 100 V
-
104.2W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-VSON-4
4-PowerTSFN
I-PAK
PHU11NQ10T,127
MOSFET N-CH 100V 10.9A IPAK
NXP USA Inc.
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
10.9A (Tc)
10V
180mOhm @ 9A, 10V
4V @ 1mA
14.7 nC @ 10 V
±20V
360 pF @ 25 V
-
57.7W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
PG-VSON-4
IPL65R340CFDAUMA1
MOSFET N-CH 650V 10.9A THIN-PAK
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
650 V
10.9A (Tc)
10V
340mOhm @ 4.4A, 10V
4.5V @ 400µA
41 nC @ 10 V
±20V
1100 pF @ 100 V
-
104.2W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-VSON-4
4-PowerTSFN
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10.9A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.