FET, MOSFET Arrays

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)2 P-Channel (Dual)
FET Feature
Logic Level GateLogic Level Gate, 4.5V Drive
Current - Continuous Drain (Id) @ 25°C
2A6A
Rds On (Max) @ Id, Vgs
22mOhm @ 7.7A, 10V80mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
1V @ 11µA2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5nC @ 10V10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
500pF @ 15V800pF @ 15V
Power - Max
500mW1.4W
Package / Case
8-SOIC (0.154", 3.90mm Width)SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
PG-DSO-8PG-TSOP6-6
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SC-74, SOT-457
BSL308PEH6327XTSA1
MOSFET 2P-CH 30V 2A TSOP6-6
Infineon Technologies
6,967
In Stock
1 : ¥8.29000
Cut Tape (CT)
3,000 : ¥2.03650
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 P-Channel (Dual)
Logic Level Gate, 4.5V Drive
30V
2A
80mOhm @ 2A, 10V
1V @ 11µA
5nC @ 10V
500pF @ 15V
500mW
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
15,070
In Stock
1 : ¥7.31000
Cut Tape (CT)
2,500 : ¥2.77912
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
30V
6A
22mOhm @ 7.7A, 10V
2.1V @ 250µA
10nC @ 10V
800pF @ 15V
1.4W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
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of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.