FET, MOSFET Arrays

Results: 5
Manufacturer
Diodes IncorporatedGood-Ark SemiconductorInfineon TechnologiesMicro Commercial Coonsemi
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
N and P-ChannelN and P-Channel Complementary
FET Feature
-Logic Level GateLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)
30V60V
Current - Continuous Drain (Id) @ 25°C
510mA, 340mA2.3A, 2A4A (Tc), 3A (Tc)4.5A, 3.5A4.6A (Ta), 3.3A (Ta)
Rds On (Max) @ Id, Vgs
30mOhm @ 4A, 10V, 65mOhm @ 3A, 10V35mOhm @ 3A, 10V, 90mOhm @ 3A, 10V50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V57mOhm @ 2.3A, 10V2Ohm @ 510mA, 10V
Vgs(th) (Max) @ Id
2V @ 11µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.5nC @ 10V4.5nC @ 10V, 6.5nC @ 10V6.08nC @ 15V8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
20pF @ 25V, 66pF @ 25V190pF @ 15V, 254pF @ 15V275pF @ 15V315pF @ 10V, 365pF @ 10V500pF @ 25V
Power - Max
500mW700mW700mW (Ta)2W2W (Tc)
Package / Case
SOT-23-6SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
PG-TSOP6-6SOT-23-6LSuperSOT™-6TSOT-26
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SG6858TZ
NDC7001C
MOSFET N/P-CH 60V 0.51A SSOT6
onsemi
11,368
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.26831
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate
60V
510mA, 340mA
2Ohm @ 510mA, 10V
2.5V @ 250µA
1.5nC @ 10V
20pF @ 25V, 66pF @ 25V
700mW
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT™-6
TSOT-26
DMC3071LVT-7
MOSFET N/P-CH 30V 4.6A TSOT26
Diodes Incorporated
22,317
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.82347
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel Complementary
-
30V
4.6A (Ta), 3.3A (Ta)
50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
2.5V @ 250µA
4.5nC @ 10V, 6.5nC @ 10V
190pF @ 15V, 254pF @ 15V
700mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
SC-74, SOT-457
BSL308CH6327XTSA1
MOSFET N/P-CH 30V 2.3A TSOP6-6
Infineon Technologies
18,267
In Stock
1 : ¥5.09000
Cut Tape (CT)
3,000 : ¥1.93664
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel Complementary
Logic Level Gate, 4.5V Drive
30V
2.3A, 2A
57mOhm @ 2.3A, 10V
2V @ 11µA
1.5nC @ 10V
275pF @ 15V
500mW
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
SOT 23-6
SIL3724A-TP
MOSFET N/P-CH 30V 4.5A SOT23-6L
Micro Commercial Co
5,990
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.01219
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel
-
30V
4.5A, 3.5A
35mOhm @ 3A, 10V, 90mOhm @ 3A, 10V
2.5V @ 250µA
6.08nC @ 15V
315pF @ 10V, 365pF @ 10V
2W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-6
SOT-23-6L
SSF3714
SSF3714
MOSFET N/P-CH 30V 4A/3A SOT23-6
Good-Ark Semiconductor
4,980
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.73631
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel
-
30V
4A (Tc), 3A (Tc)
30mOhm @ 4A, 10V, 65mOhm @ 3A, 10V
2.5V @ 250µA
8nC @ 4.5V
500pF @ 25V
2W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-6
SOT-23-6L
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FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.