FET, MOSFET Arrays

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)N and P-Channel Complementary
FET Feature
-Logic Level Gate
Drain to Source Voltage (Vdss)
20V40V
Current - Continuous Drain (Id) @ 25°C
6.5A9A (Ta), 6.5A (Ta)
Rds On (Max) @ Id, Vgs
24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V30mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.8nC @ 4.5V, 10.6nC @ 4.5V9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
650pF @ 10V1060pF @ 20V, 1154pF @ 20V
Power - Max
900mW1.8W (Ta)
Supplier Device Package
8-SO8-SOIC
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
8-SOIC
FDS9926A
MOSFET 2N-CH 20V 6.5A 8SOIC
onsemi
32,334
In Stock
1 : ¥5.66000
Cut Tape (CT)
2,500 : ¥2.15997
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
20V
6.5A
30mOhm @ 6.5A, 4.5V
1.5V @ 250µA
9nC @ 4.5V
650pF @ 10V
900mW
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
8 SO
DMC4029SSDQ-13
MOSFET N/P-CH 40V 9A/6.5A 8SO
Diodes Incorporated
2,395
In Stock
1 : ¥7.31000
Cut Tape (CT)
2,500 : ¥2.76880
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel Complementary
-
40V
9A (Ta), 6.5A (Ta)
24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
3V @ 250µA
8.8nC @ 4.5V, 10.6nC @ 4.5V
1060pF @ 20V, 1154pF @ 20V
1.8W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
Showing
of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.