FET, MOSFET Arrays

Results: 4
Manufacturer
Diodes IncorporatedonsemiVishay Siliconix
Series
-PowerTrench®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Feature
-Logic Level GateLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)
20V30V
Current - Continuous Drain (Id) @ 25°C
2.5A, 2A3.4A, 2.8A3.9A, 2.1A
Rds On (Max) @ Id, Vgs
58mOhm @ 2.5A, 4.5V60mOhm @ 3.1A, 10V95mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA2.3V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.8nC @ 10V6.6nC @ 10V13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
150pF @ 10V282pF @ 15V400pF @ 15V
Power - Max
700mW840mW1.4W, 1.3W
Supplier Device Package
6-TSOPSuperSOT™-6TSOT-26
Stocking Options
Environmental Options
Media
Marketplace Product
4Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SG6858TZ
FDC6333C
MOSFET N/P-CH 30V 2.5A/2A SSOT6
onsemi
28,676
In Stock
1 : ¥4.93000
Cut Tape (CT)
3,000 : ¥1.66580
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate
30V
2.5A, 2A
95mOhm @ 2.5A, 10V
3V @ 250µA
6.6nC @ 10V
282pF @ 15V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT™-6
TSOT-26
DMG6602SVT-7
MOSFET N/P-CH 30V 3.4A TSOT26
Diodes Incorporated
128,443
In Stock
3,750,000
Factory
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.48621
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate, 4.5V Drive
30V
3.4A, 2.8A
60mOhm @ 3.1A, 10V
2.3V @ 250µA
13nC @ 10V
400pF @ 15V
840mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
TSOT-26
DMG6602SVTQ-7
MOSFET N/P-CH 30V 3.4A TSOT26
Diodes Incorporated
93,861
In Stock
345,000
Factory
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.79326
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel
-
30V
3.4A, 2.8A
60mOhm @ 3.1A, 10V
2.3V @ 250µA
13nC @ 10V
400pF @ 15V
840mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
Pkg 5540
SI3585CDV-T1-GE3
MOSFET N/P-CH 20V 3.9A 6TSOP
Vishay Siliconix
7,909
In Stock
1 : ¥4.35000
Cut Tape (CT)
3,000 : ¥1.46767
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate
20V
3.9A, 2.1A
58mOhm @ 2.5A, 4.5V
1.5V @ 250µA
4.8nC @ 10V
150pF @ 10V
1.4W, 1.3W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
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FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.