Single Bipolar Transistors

Results: 3
Manufacturer
Central Semiconductor CorpNexperia USA Inc.onsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Collector (Ic) (Max)
600 mA2 A3 A
Voltage - Collector Emitter Breakdown (Max)
100 V160 V
Vce Saturation (Max) @ Ib, Ic
180mV @ 200mA, 2A200mV @ 5mA, 50mA1.2V @ 375mA, 3A
Current - Collector Cutoff (Max)
50nA (ICBO)100nA (ICBO)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A, 4V80 @ 10mA, 5V120 @ 500mA, 2V
Power - Max
800 mW1.6 W2 W
Frequency - Transition
3MHz100MHz300MHz
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Supplier Device Package
DPAKSOT-223SOT-223 (TO-261)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT-223 (TO-261)
NSV1C201MZ4T1G
TRANS NPN 100V 2A SOT223
onsemi
17,414
In Stock
1 : ¥5.09000
Cut Tape (CT)
1,000 : ¥1.91814
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
2 A
100 V
180mV @ 200mA, 2A
100nA (ICBO)
120 @ 500mA, 2V
800 mW
100MHz
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-261-4, TO-261AA
SOT-223 (TO-261)
MJD148J
MJD31CAJ
MJD31CA/SOT428/DPAK
Nexperia USA Inc.
5,169
In Stock
1 : ¥4.19000
Cut Tape (CT)
2,500 : ¥1.40141
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
3 A
100 V
1.2V @ 375mA, 3A
1µA
25 @ 1A, 4V
1.6 W
3MHz
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
8,270
In Stock
1 : ¥10.10000
Cut Tape (CT)
1,000 : ¥4.44856
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
600 mA
160 V
200mV @ 5mA, 50mA
50nA (ICBO)
80 @ 10mA, 5V
2 W
300MHz
-65°C ~ 150°C (TJ)
-
-
Surface Mount
TO-261-4, TO-261AA
SOT-223
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of 3

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.