Single Bipolar Transistors

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

TBC847B,LM TRANS NPN 50V 0.15A SOT23-3 Toshiba Semiconductor and Storage	119,695 In Stock	1 : ¥1.23000 Cut Tape (CT) 3,000 : ¥0.23206 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	NPN	150 mA	50 V	400mV @ 100mA, 5mA	30nA (ICBO)	200 @ 2mA, 5V	320 mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
MMBT5551LT1G TRANS NPN 160V 0.6A SOT23-3 onsemi	610,891 In Stock	1 : ¥1.40000 Cut Tape (CT) 3,000 : ¥0.24109 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	NPN	600 mA	160 V	200mV @ 5mA, 50mA	100nA	80 @ 10mA, 5V	225 mW	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)

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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.