Single IGBTs

Results: 2
Product Status
ActiveObsolete
IGBT Type
Field StopTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)
600 V650 V
Current - Collector Pulsed (Icm)
120 A160 A
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 40A2.1V @ 15V, 40A
Power - Max
94 W115 W
Switching Energy
132µJ (on), 62µJ (off)870µJ (on), 260µJ (off)
Gate Charge
75 nC119 nC
Td (on/off) @ 25°C
12ns/92ns17.8ns/81.6ns
Test Condition
400V, 10A, 6Ohm, 15V400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr)
36 ns274 ns
Supplier Device Package
TO-3PFTO-3PF-3
Stocking Options
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-220F
FGAF40N60SMD
IGBT FIELD STOP 600V 80A TO3PF
onsemi
320
In Stock
30 : ¥31.16433
Tube
-
Tube
Active
Field Stop
600 V
80 A
120 A
1.9V @ 15V, 40A
115 W
870µJ (on), 260µJ (off)
Standard
119 nC
12ns/92ns
400V, 40A, 6Ohm, 15V
36 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
TO-3PF-3
FGAF40S65AQ
IGBT TRENCH FS 650V 80A TO3PF-3
onsemi
6
In Stock
1 : ¥28.32000
Tube
-
Tube
Obsolete
Trench Field Stop
650 V
80 A
160 A
2.1V @ 15V, 40A
94 W
132µJ (on), 62µJ (off)
Standard
75 nC
17.8ns/81.6ns
400V, 10A, 6Ohm, 15V
274 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF-3
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of 2

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.